EP 3220409 B1 20200805 - SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO COBALT, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
Title (en)
SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO COBALT, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
Title (de)
REINIGUNGSLÖSUNG FÜR EIN HALBLEITERELEMENT ZUR UNTERDRÜCKUNG VON SCHÄDEN AN KOBALT UND VERFAHREN ZUM REINIGEN EINES HALBLEITERELEMENTS DAMIT
Title (fr)
LIQUIDE DE NETTOYAGE POUR ÉLÉMENT SEMI-CONDUCTEUR INHIBANT LES DOMMAGES SUR DU COBALT, ET PROCÉDÉ DE NETTOYAGE D'ÉLÉMENT SEMI-CONDUCTEUR METTANT EN OEUVRE CELUI-CI
Publication
Application
Priority
- JP 2014230636 A 20141113
- JP 2015078077 W 20151002
Abstract (en)
[origin: EP3220409A1] According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.
IPC 8 full level
H01L 21/304 (2006.01); C11D 7/06 (2006.01); C11D 7/10 (2006.01); C11D 7/18 (2006.01); C11D 7/32 (2006.01); C11D 7/38 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC (source: EP IL KR US)
C11D 3/0073 (2013.01 - IL KR); C11D 3/044 (2013.01 - IL KR); C11D 3/28 (2013.01 - IL KR); C11D 3/30 (2013.01 - IL KR); C11D 7/04 (2013.01 - IL US); C11D 7/06 (2013.01 - EP IL US); C11D 7/08 (2013.01 - IL US); C11D 7/10 (2013.01 - EP IL US); C11D 7/105 (2013.01 - IL US); C11D 7/12 (2013.01 - IL US); C11D 7/32 (2013.01 - EP IL US); C11D 7/3209 (2013.01 - IL US); C11D 7/3218 (2013.01 - IL US); C11D 7/3281 (2013.01 - IL US); H01L 21/02041 (2013.01 - IL US); H01L 21/02052 (2013.01 - IL KR); H01L 21/0206 (2013.01 - IL US); H01L 21/02063 (2013.01 - EP IL US); H01L 21/30604 (2013.01 - IL US); H01L 21/308 (2013.01 - IL US); H01L 21/31133 (2013.01 - EP IL US); C11D 2111/22 (2024.01 - EP IL KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3220409 A1 20170920; EP 3220409 A4 20180425; EP 3220409 B1 20200805; CN 107078044 A 20170818; CN 107078044 B 20200619; IL 252100 A0 20170731; IL 252100 B 20200531; JP 6555274 B2 20190807; JP WO2016076033 A1 20170824; KR 102398801 B1 20220517; KR 20170083025 A 20170717; TW 201619361 A 20160601; TW I667340 B 20190801; US 10629426 B2 20200421; US 2017240850 A1 20170824; WO 2016076033 A1 20160519
DOCDB simple family (application)
EP 15859334 A 20151002; CN 201580056809 A 20151002; IL 25210017 A 20170504; JP 2015078077 W 20151002; JP 2016558929 A 20151002; KR 20177008629 A 20151002; TW 104132922 A 20151007; US 201515514917 A 20151002