EP 3221901 A1 20170927 - METHOD FOR PRODUCING DOPED POLYCRYSTALLINE SEMICONDUCTOR LAYERS
Title (en)
METHOD FOR PRODUCING DOPED POLYCRYSTALLINE SEMICONDUCTOR LAYERS
Title (de)
VERFAHREN ZUR ERZEUGUNG VON DOTIERTEN, POLYKRISTALLINEN HALBLEITERSCHICHTEN
Title (fr)
PROCÉDÉ DE GÉNÉRATION DE COUCHES SEMICONDUCTRICES POLYCRISTALLINES DOPÉES
Publication
Application
Priority
- DE 102014223465 A 20141118
- EP 2015076761 W 20151117
Abstract (en)
[origin: WO2016079087A1] The invention relates to a method for generating highly doped polycrystalline semiconductor layers on a semiconductor substrate. A first Si precursor composition containing at least one first dopant is applied onto one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition containing at least one second dopant is applied onto one or more additional regions of the surface of the semiconductor substrate, wherein the first dopant is an n-type dopant, and the second dopant is a p-type dopant or vice versa; and each of the coated regions of the surface of the semiconductor substrate is converted such that polycrystalline silicon is produced from the Si precursor. The invention further relates to the semiconductors which can be obtained according to the method and to the use thereof, in particular in the production of solar cells.
IPC 8 full level
H01L 21/02 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC (source: CN EP KR US)
B05D 1/005 (2013.01 - US); B05D 3/0254 (2013.01 - US); H01L 21/0245 (2013.01 - CN EP KR US); H01L 21/02488 (2013.01 - CN EP KR US); H01L 21/02532 (2013.01 - CN EP KR US); H01L 21/02576 (2013.01 - CN EP KR US); H01L 21/02579 (2013.01 - CN EP KR US); H01L 21/02628 (2013.01 - CN EP KR US); H01L 31/02167 (2013.01 - KR); H01L 31/0288 (2013.01 - US); H01L 31/0368 (2013.01 - KR); H01L 31/03682 (2013.01 - US); H01L 31/068 (2013.01 - CN EP US); H01L 31/0745 (2013.01 - US); H01L 31/1804 (2013.01 - CN EP KR US); H01L 31/182 (2013.01 - KR US); H01L 31/1872 (2013.01 - US); Y02E 10/546 (2013.01 - EP); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2016079087A1
Citation (examination)
- US 7485691 B1 20090203 - GUO WENZHUO [US], et al
- RÖMER UDO ET AL: "Recombination behavior and contact resistance ofn+andp+poly-crystalline Si/mono-crystalline Si junctions", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 131, 26 June 2014 (2014-06-26), pages 85 - 91, XP029075019, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2014.06.003
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102014223465 A1 20160519; CN 107004570 A 20170801; EP 3221901 A1 20170927; JP 2018503970 A 20180208; KR 20170085079 A 20170721; MX 2017006424 A 20180502; PH 12017500904 A1 20171127; TW 201631788 A 20160901; US 2017365733 A1 20171221; WO 2016079087 A1 20160526
DOCDB simple family (application)
DE 102014223465 A 20141118; CN 201580062622 A 20151117; EP 15794943 A 20151117; EP 2015076761 W 20151117; JP 2017526872 A 20151117; KR 20177015991 A 20151117; MX 2017006424 A 20151117; PH 12017500904 A 20170516; TW 104137897 A 20151117; US 201515527586 A 20151117