Global Patent Index - EP 3221901 A1

EP 3221901 A1 20170927 - METHOD FOR PRODUCING DOPED POLYCRYSTALLINE SEMICONDUCTOR LAYERS

Title (en)

METHOD FOR PRODUCING DOPED POLYCRYSTALLINE SEMICONDUCTOR LAYERS

Title (de)

VERFAHREN ZUR ERZEUGUNG VON DOTIERTEN, POLYKRISTALLINEN HALBLEITERSCHICHTEN

Title (fr)

PROCÉDÉ DE GÉNÉRATION DE COUCHES SEMICONDUCTRICES POLYCRISTALLINES DOPÉES

Publication

EP 3221901 A1 20170927 (DE)

Application

EP 15794943 A 20151117

Priority

  • DE 102014223465 A 20141118
  • EP 2015076761 W 20151117

Abstract (en)

[origin: WO2016079087A1] The invention relates to a method for generating highly doped polycrystalline semiconductor layers on a semiconductor substrate. A first Si precursor composition containing at least one first dopant is applied onto one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition containing at least one second dopant is applied onto one or more additional regions of the surface of the semiconductor substrate, wherein the first dopant is an n-type dopant, and the second dopant is a p-type dopant or vice versa; and each of the coated regions of the surface of the semiconductor substrate is converted such that polycrystalline silicon is produced from the Si precursor. The invention further relates to the semiconductors which can be obtained according to the method and to the use thereof, in particular in the production of solar cells.

IPC 8 full level

H01L 31/068 (2012.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01)

CPC (source: CN EP KR US)

B05D 1/005 (2013.01 - US); B05D 3/0254 (2013.01 - US); H01L 21/0245 (2013.01 - CN EP KR US); H01L 21/02488 (2013.01 - CN EP KR US); H01L 21/02532 (2013.01 - CN EP KR US); H01L 21/02576 (2013.01 - CN EP KR US); H01L 21/02579 (2013.01 - CN EP KR US); H01L 21/02628 (2013.01 - CN EP KR US); H01L 31/02167 (2013.01 - KR); H01L 31/0288 (2013.01 - US); H01L 31/0368 (2013.01 - KR); H01L 31/03682 (2013.01 - US); H01L 31/068 (2013.01 - CN EP US); H01L 31/0745 (2013.01 - US); H01L 31/1804 (2013.01 - CN EP KR US); H01L 31/182 (2013.01 - KR US); H01L 31/1872 (2013.01 - US); Y02E 10/546 (2013.01 - EP); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 2016079087A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

DE 102014223465 A1 20160519; CN 107004570 A 20170801; EP 3221901 A1 20170927; JP 2018503970 A 20180208; KR 20170085079 A 20170721; MX 2017006424 A 20180502; PH 12017500904 A1 20171127; TW 201631788 A 20160901; US 2017365733 A1 20171221; WO 2016079087 A1 20160526

DOCDB simple family (application)

DE 102014223465 A 20141118; CN 201580062622 A 20151117; EP 15794943 A 20151117; EP 2015076761 W 20151117; JP 2017526872 A 20151117; KR 20177015991 A 20151117; MX 2017006424 A 20151117; PH 12017500904 A 20170516; TW 104137897 A 20151117; US 201515527586 A 20151117