EP 3227889 A1 20171011 - READING CIRCUIT FOR RESISTIVE MEMORY
Title (en)
READING CIRCUIT FOR RESISTIVE MEMORY
Title (de)
LESESCHALTUNG FÜR RESISTIVEN SPEICHER
Title (fr)
CIRCUIT DE LECTURE POUR MÉMOIRE RÉSISTIVE
Publication
Application
Priority
- FR 1461717 A 20141201
- FR 2015053273 W 20151201
Abstract (en)
[origin: WO2016087763A1] The invention relates to a circuit for reading a programmed resistive state of resistive elements (102) of a resistive memory (101), wherein each resistive element may be programmed to be in a first or a second resistive state (Rmax, Rmin), wherein the circuit comprises a current integrator (122) suitable for integrating a difference in current between a reading current (IR) flowing through a first of the resistive elements and a reference current (IREF).
IPC 8 full level
G11C 7/06 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); G11C 13/00 (2006.01)
CPC (source: EP US)
G11C 7/06 (2013.01 - EP US); G11C 11/1673 (2013.01 - EP US); G11C 11/2273 (2013.01 - EP US); G11C 13/0004 (2013.01 - EP US); G11C 13/004 (2013.01 - EP US); G11C 13/0007 (2013.01 - EP US); G11C 2013/005 (2013.01 - EP US); G11C 2013/0054 (2013.01 - EP US); G11C 2207/063 (2013.01 - EP US); G11C 2207/068 (2013.01 - EP US)
Citation (search report)
See references of WO 2016087763A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
FR 3029342 A1 20160603; FR 3029342 B1 20180112; EP 3227889 A1 20171011; US 10304529 B2 20190528; US 2017271005 A1 20170921; WO 2016087763 A1 20160609
DOCDB simple family (application)
FR 1461717 A 20141201; EP 15810692 A 20151201; FR 2015053273 W 20151201; US 201515531782 A 20151201