EP 3227924 B1 20200722 - POWER SEMICONDUCTOR DEVICE
Title (en)
POWER SEMICONDUCTOR DEVICE
Title (de)
LEISTUNGSHALBLEITERBAUELEMENT
Title (fr)
DISPOSITIF DE SEMI-CONDUCTEUR D'ALIMENTATION
Publication
Application
Priority
- EP 16153826 A 20160202
- EP 2017051156 W 20170120
Abstract (en)
[origin: WO2017133904A1] A power semiconductor device (1) comprises plurality of vertical field effect transistor cells (10) arranged in a plurality of parallel rows, each row including vertical field effect transistor cells (10) arranged along a first direction (x), wherein in each vertical field effect transistor cell (10) a body region (5a) is surrounded by the gate layer from two lateral surfaces (16) of the body region (5a) opposite to each other. In each row of vertical field effect transistor cells (10) the body regions (5a) are separated from each other in the first direction (x) by first gate regions (7a) of the gate layer (7), each first gate region (7a) penetrating through the body layer (5), so that in each row of vertical field effect transistor cells (10) the first gate regions (7a) alternate with the body regions (5a) along the first direction (x). The first gate regions (7a) within each row of vertical field effect transistor cells (10) are connected with each other by second gate regions (7b) extending across the body regions (5a) of the respective vertical field effect transistor cells (10) in the first direction (x). The first gate regions (7a) and the second gate regions (7b) form continuous gate strips extending with its longitudinal axis in the first direction (x). A source electrode (65) is formed on the source layer (6) to form a first ohmic contact to the source layer (6) between each pair of adjacent gate strips. The whole top surface (17') of the body region (5a') facing away from the substrate layer (4) is in direct contact with the gate insulation layer (8).
IPC 8 full level
H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/0696 (2013.01 - EP US); H01L 29/0869 (2013.01 - EP US); H01L 29/1095 (2013.01 - EP US); H01L 29/4238 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US); H01L 29/4236 (2013.01 - US); H01L 29/42368 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017133904 A1 20170810; CN 108604603 A 20180928; CN 108604603 B 20210528; EP 3227924 A1 20171011; EP 3227924 B1 20200722; JP 2019503591 A 20190207; JP 6907233 B2 20210721; US 10490658 B2 20191126; US 2018350977 A1 20181206
DOCDB simple family (application)
EP 2017051156 W 20170120; CN 201780009665 A 20170120; EP 17700973 A 20170120; JP 2018558483 A 20170120; US 201816052981 A 20180802