EP 3227932 B1 20201230 - BARRIER FILM TECHNIQUES AND CONFIGURATIONS FOR PHASE-CHANGE MEMORY ELEMENTS
Title (en)
BARRIER FILM TECHNIQUES AND CONFIGURATIONS FOR PHASE-CHANGE MEMORY ELEMENTS
Title (de)
SPERRFILMTECHNIKEN UND -KONFIGURATIONEN FÜR PHASENWECHSELSPEICHERELEMENTE
Title (fr)
TECHNIQUES ET CONFIGURATIONS DE FILM BARRIÈRE POUR ÉLÉMENTS DE MÉMOIRE À CHANGEMENT DE PHASE
Publication
Application
Priority
- US 201414562473 A 20141205
- US 2015059338 W 20151105
Abstract (en)
[origin: WO2016089542A1] Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a bottom electrode layer, a select device layer disposed on the bottom electrode layer, a middle electrode layer disposed on the select device layer, a phase-change material layer disposed on the middle electrode layer, a top electrode layer disposed on the phase-change material layer, and a barrier film comprising a group IV transition metal, a group VI transition metal, carbon (C) and nitrogen (N), the barrier film being disposed between the bottom electrode layer and the top electrode layer. Other embodiments may be described and/or claimed.
IPC 8 full level
H10N 70/10 (2023.01)
CPC (source: CN EP KR US)
H01L 29/6609 (2013.01 - KR US); H10B 63/20 (2023.02 - EP KR US); H10B 63/24 (2023.02 - EP); H10B 63/80 (2023.02 - CN EP); H10N 70/011 (2023.02 - EP US); H10N 70/021 (2023.02 - CN KR US); H10N 70/231 (2023.02 - CN EP KR US); H10N 70/801 (2023.02 - CN US); H10N 70/826 (2023.02 - CN EP US); H10N 70/841 (2023.02 - CN EP KR US); H10N 70/882 (2023.02 - KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2016089542 A1 20160609; CN 107004765 A 20170801; CN 107004765 B 20210205; EP 3227932 A1 20171011; EP 3227932 A4 20180725; EP 3227932 B1 20201230; JP 2018502444 A 20180125; JP 6657529 B2 20200304; KR 102432053 B1 20220812; KR 20170093117 A 20170814; TW 201633526 A 20160916; TW I587497 B 20170611; US 2016163975 A1 20160609; US 9419212 B2 20160816
DOCDB simple family (application)
US 2015059338 W 20151105; CN 201580060284 A 20151105; EP 15864633 A 20151105; JP 2017525096 A 20151105; KR 20177012612 A 20151105; TW 104133549 A 20151013; US 201414562473 A 20141205