EP 3228583 A1 20171011 - METHOD FOR MANUFACTURING MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE, AND MEMS INFRARED DETECTOR
Title (en)
METHOD FOR MANUFACTURING MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE, AND MEMS INFRARED DETECTOR
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER ZWEISCHICHTIGEN MEMS-SUSPENSIONSMIKROSTRUKTUR UND MEMS- INFRAROTDETEKTOR
Title (fr)
PROCÉDÉ DE PRODUCTION DE MICROSTRUCTURE DE MICROSYSTÈME ÉLECTROMÉCANIQUE SUSPENDUE À DOUBLE COUCHE ET DÉTECTEUR INFRAROUGE À MICROSYSTÈME ÉLECTROMÉCANIQUE
Publication
Application
Priority
- CN 201410723696 A 20141202
- CN 2015087594 W 20150820
Abstract (en)
A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.
IPC 8 full level
CPC (source: EP US)
B81B 7/02 (2013.01 - US); B81C 1/00 (2013.01 - US); B81C 1/0015 (2013.01 - EP US); G01J 1/04 (2013.01 - US); G01J 1/42 (2013.01 - US); G01J 5/024 (2013.01 - EP US); G01J 5/0853 (2013.01 - EP US); B81B 2201/0278 (2013.01 - EP US); B81B 2203/0118 (2013.01 - EP US); B81C 2201/0197 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
US 10301175 B2 20190528; US 2017203960 A1 20170720; CN 105712284 A 20160629; CN 105712284 B 20170929; EP 3228583 A1 20171011; EP 3228583 A4 20180725; EP 3228583 B1 20231101; EP 3228583 C0 20231101; JP 2017524126 A 20170824; WO 2016086690 A1 20160609
DOCDB simple family (application)
US 201515327902 A 20150820; CN 201410723696 A 20141202; CN 2015087594 W 20150820; EP 15866031 A 20150820; JP 2017502648 A 20150820