EP 3241243 A1 20171108 - METHOD FOR DOPING SEMICONDUCTORS
Title (en)
METHOD FOR DOPING SEMICONDUCTORS
Title (de)
VERFAHREN ZUM DOTIEREN VON HALBLEITERN
Title (fr)
PROCÉDÉ POUR DOPER DES SEMICONDUCTEURS
Publication
Application
Priority
- EP 14004453 A 20141230
- EP 2015002412 W 20151201
Abstract (en)
[origin: WO2016107662A1] The invention relates to a method for producing structured high-efficiency solar cells and photovoltaic elements that have differently doped regions. The invention also relates to the solar cells that are produced by said method and have increased efficiency.
IPC 8 full level
H01L 21/22 (2006.01); H01L 31/0288 (2006.01); H01L 31/18 (2006.01)
CPC (source: CN EP KR US)
H01L 21/2225 (2013.01 - EP KR US); H01L 31/02167 (2013.01 - KR); H01L 31/0288 (2013.01 - CN EP KR US); H01L 31/1804 (2013.01 - CN EP KR US); H01L 31/186 (2013.01 - KR); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2016107662A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2016107662 A1 20160707; CN 107112381 A 20170829; EP 3241243 A1 20171108; JP 2018506180 A 20180301; KR 20170100628 A 20170904; TW 201635348 A 20161001; US 2017372903 A1 20171228
DOCDB simple family (application)
EP 2015002412 W 20151201; CN 201580071582 A 20151201; EP 15805391 A 20151201; JP 2017534945 A 20151201; KR 20177020893 A 20151201; TW 104144315 A 20151229; US 201515540618 A 20151201