Global Patent Index - EP 3241243 A1

EP 3241243 A1 20171108 - METHOD FOR DOPING SEMICONDUCTORS

Title (en)

METHOD FOR DOPING SEMICONDUCTORS

Title (de)

VERFAHREN ZUM DOTIEREN VON HALBLEITERN

Title (fr)

PROCÉDÉ POUR DOPER DES SEMICONDUCTEURS

Publication

EP 3241243 A1 20171108 (DE)

Application

EP 15805391 A 20151201

Priority

  • EP 14004453 A 20141230
  • EP 2015002412 W 20151201

Abstract (en)

[origin: WO2016107662A1] The invention relates to a method for producing structured high-efficiency solar cells and photovoltaic elements that have differently doped regions. The invention also relates to the solar cells that are produced by said method and have increased efficiency.

IPC 8 full level

H01L 31/0288 (2006.01); H01L 21/22 (2006.01); H01L 31/18 (2006.01)

CPC (source: CN EP KR US)

H01L 21/2225 (2013.01 - EP KR US); H01L 31/02167 (2013.01 - KR); H01L 31/0288 (2013.01 - CN EP KR US); H01L 31/1804 (2013.01 - CN EP KR US); H01L 31/186 (2013.01 - KR); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 2016107662A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2016107662 A1 20160707; CN 107112381 A 20170829; EP 3241243 A1 20171108; JP 2018506180 A 20180301; KR 20170100628 A 20170904; TW 201635348 A 20161001; US 2017372903 A1 20171228

DOCDB simple family (application)

EP 2015002412 W 20151201; CN 201580071582 A 20151201; EP 15805391 A 20151201; JP 2017534945 A 20151201; KR 20177020893 A 20151201; TW 104144315 A 20151229; US 201515540618 A 20151201