EP 3244453 A1 20171115 - AN ELECTRONIC DEVICE AND METHOD OF MAKING THEREOF
Title (en)
AN ELECTRONIC DEVICE AND METHOD OF MAKING THEREOF
Title (de)
ELEKTRONISCHE VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
DISPOSITIF ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- US 201514879884 A 20151009
- US 201615235742 A 20160812
- EP 16002123 A 20161004
Abstract (en)
As a cost effective alternative to lithography, there is provided a method of forming an electronic device comprising the steps of depositing a first quantity of a first liquid medium comprising a dopant on a first portion of a planar surface and depositing a second quantity of the first liquid medium on a second portion of the surface, the first quantity spaced from the second quantity by a gap; heating the first quantity, the second quantity, and the surface, the heating configured to cause diffusion of at least some of the dopant from the first liquid medium into the surface; depositing a dielectric material on the surface in the gap; selectively removing the first quantity and the second quantity from the surface; depositing an electrical contact on each of the first portion and the second portion; and depositing a further electrical contact on the dielectric material.
IPC 8 full level
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC (source: EP)
H01L 27/1292 (2013.01); H01L 29/0657 (2013.01); H01L 29/66772 (2013.01); H01L 29/78618 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01)
Citation (applicant)
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- US 6679998 B2 20040120 - KNAPPENBERGER ERIC J [US], et al
- US 4470874 A 19840911 - BARTUSH THOMAS A [US], et al
- US 9396932 B2 20160719 - DYKAAR DOUGLAS R [CA]
- US 201615184429 A 20160616
- TAKASHI MINEMOTO; MIKIO MUROZONO; HIDEYUKI TAKAKURA; YOSHIHIRO HAMAKAWA: "Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction by Satoshi OMAE", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 5A, 2006, pages 3933 - 3937
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- KO, F. ET AL.: "Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications", RSC ADV., vol. 4, 2014, pages 18493
Citation (search report)
- [XY] WO 2013053052 A1 20130418 - DIFTEK LASERS INC [CA]
- [Y] EP 2833391 A1 20150204 - TEIJIN LTD [JP]
- [X] EP 2846354 A2 20150311 - DIFTEK LASERS INC [CA]
- [A] US 2004248429 A1 20041209 - AOKI TAKASHI [JP]
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- [A] EP 0663689 A2 19950719 - AT & T CORP [US]
- [A] US 2006040435 A1 20060223 - MORISUE MASAFUMI [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DOCDB simple family (application)
EP 17001028 A 20161004