EP 3248214 A1 20171129 - METHOD OF FORMING SELF-ALIGNED SPLIT-GATE MEMORY CELL ARRAY WITH METAL GATES AND LOGIC DEVICES
Title (en)
METHOD OF FORMING SELF-ALIGNED SPLIT-GATE MEMORY CELL ARRAY WITH METAL GATES AND LOGIC DEVICES
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SELBSTAUSGERICHTETEN SPEICHERZELLENARRAYS MIT GETEILTEM GATE MIT METALLGATES UND LOGISCHEN VORRICHTUNGEN
Title (fr)
PROCÉDÉ DE FORMATION D'UNE MATRICE DE CELLULES DE MÉMOIRE À GRILLE SÉPARÉE AUTO-ALIGNÉES AVEC GRILLES MÉTALLIQUES ET DISPOSITIFS LOGIQUES
Publication
Application
Priority
- US 201562107077 P 20150123
- US 2016014393 W 20160121
Abstract (en)
[origin: CN107210202A] A method of forming a memory device by forming spaced apart first and second regions with a channel region therebetween, forming a floating gate over and insulated from a first portion of the channel region, forming a control gate over and insulated from the floating gate, forming an erase gate over and insulated from the first region, and forming a select gate over and insulated from a second portion of the channel region. Forming of the floating gate includes forming a first insulation layer on the substrate, forming a first conductive layer on the first insulation layer, and performing two separate etches to form first and second trenches through the first conductive layer. A sidewall of the first conductive layer at the first trench has a negative slope and a sidewall of the first conductive layer at the second trench is vertical.
IPC 8 full level
H01L 21/28 (2006.01); H01L 27/115 (2017.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01)
CPC (source: CN EP US)
H01L 29/40114 (2019.07 - CN EP US); H01L 29/42328 (2013.01 - CN EP US); H01L 29/66545 (2013.01 - CN EP US); H01L 29/66825 (2013.01 - CN EP US); H01L 29/7881 (2013.01 - CN EP US); H10B 41/35 (2023.02 - CN EP US); H10B 41/44 (2023.02 - CN EP US)
Citation (search report)
See references of WO 2016118785A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
CN 107210202 A 20170926; CN 107210202 B 20181109; EP 3248214 A1 20171129; EP 3248214 B1 20211201
DOCDB simple family (application)
CN 201680006700 A 20160121; EP 16709160 A 20160121