Global Patent Index - EP 3256882 B1

EP 3256882 B1 20200624 - SCINTILLATION DETECTOR FOR DETECTION OF IONISING RADIATION

Title (en)

SCINTILLATION DETECTOR FOR DETECTION OF IONISING RADIATION

Title (de)

SZINTILLATIONSDETEKTOR ZUR DETEKTION VON IONISIERENDER STRAHLUNG

Title (fr)

DÉTECTEUR À SCINTILLATION PERMETTANT LA DÉTECTION D'UN RAYONNEMENT IONISANT

Publication

EP 3256882 B1 20200624 (EN)

Application

EP 16712190 A 20160208

Priority

  • CZ 201582 A 20150209
  • CZ 2016000012 W 20160208

Abstract (en)

[origin: WO2016127959A1] The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1- x- yN general formula where 0 ≤ x ≤1, 0 ≤ y ≤1 and 0 ≤ x+y ≤1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes. In the structure there is arranged minimally one active couple of nitride semiconductor layers (3, 4) of principally the same polarisation consisting of the barrier layer (4) of the AlybInxbGa1- xb-ybN type and from layer (5) of the AlywInxwGa1-xw- ywN type representing a potential well where xb ≤ xw and yb ≤ yw is valid, or there is minimally one carrier attracting layer (7) of the AlydInxdGa1-xd- ydN type with the thickness (t3) less than 2 nm in which yd ≤ yw and xd ≥ xw+0,3 inserted in minimally one active couple of nitride semiconductor layers (4, 5) to decrease the luminescence decay time.

IPC 8 full level

G01T 1/24 (2006.01)

CPC (source: CN EP IL KR US)

G01T 1/1644 (2013.01 - IL US); G01T 1/20 (2013.01 - IL KR); G01T 1/2023 (2013.01 - IL US); G01T 1/24 (2013.01 - CN EP IL KR US); G01T 1/2985 (2013.01 - IL US); H01J 37/244 (2013.01 - IL US); H01J 49/025 (2013.01 - IL US); H01J 2237/2443 (2013.01 - IL US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2016127959 A1 20160818; CN 107209277 A 20170926; CN 107209277 B 20191022; CZ 201582 A3 20160629; CZ 306026 B6 20160629; EP 3256882 A1 20171220; EP 3256882 B1 20200624; IL 253156 A0 20170831; IL 253156 B 20210531; JP 2018513351 A 20180524; JP 6381815 B2 20180829; KR 101972484 B1 20190425; KR 20170125020 A 20171113; US 10067246 B2 20180904; US 2018059268 A1 20180301

DOCDB simple family (application)

CZ 2016000012 W 20160208; CN 201680009348 A 20160208; CZ 201582 A 20150209; EP 16712190 A 20160208; IL 25315617 A 20170625; JP 2017538244 A 20160208; KR 20177022632 A 20160208; US 201615541476 A 20160208