EP 3273443 A1 20180124 - A METHOD OF OPERATING A MEMORY
Title (en)
A METHOD OF OPERATING A MEMORY
Title (de)
VERFAHREN ZUM BETRIEB EINES SPEICHERS
Title (fr)
PROCÉDÉ DE FONCTIONNEMENT D'UNE MÉMOIRE
Publication
Application
Priority
- US 94391607 A 20071121
- EP 08852022 A 20081118
- US 2008083915 W 20081118
Abstract (en)
As disclosed herein, a non-volatile memory cell (208) is programmed at a first resolution, and is sensed at a second resolution different from the first resolution. In programming and sensing (also known as reading) a non-volatile memory cell, embodiments of the present invention divide the usable threshold voltage range of the non-volatile memory cells into an increased number of ranges, yielding a programming and/or a read/sense voltage resolution (also known as programming or sensing granularity) for the memory device that is higher than required by the defined logic windows of the cell. In some embodiments of the present invention this increased programming and/or sense voltage resolution may be higher than the maximum number of logic windows/threshold voltage ranges the memory cells can reliably store. It is also noted that programming operation resolution can differ from that of read/sense operation resolution. In one embodiment the programming operation voltage resolution is lower than the read operation voltage resolution, allowing for increased read accuracy and data read back/encoding. In another embodiment of the present invention the programming operation voltage resolution is higher than the read operation voltage resolution, allowing for increased programming accuracy and data disturb compensation, thereby increasing data storage stability and subsequent read back accuracy.
IPC 8 full level
G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 27/00 (2006.01); G11C 7/16 (2006.01)
CPC (source: EP US)
G11C 11/5628 (2013.01 - EP US); G11C 11/5642 (2013.01 - EP US); G11C 16/0483 (2013.01 - EP US); G11C 16/10 (2013.01 - EP US); G11C 16/26 (2013.01 - EP US); G11C 16/3427 (2013.01 - EP US); G11C 27/005 (2013.01 - EP US); G11C 7/16 (2013.01 - EP US); G11C 16/3418 (2013.01 - EP US); G11C 2211/5641 (2013.01 - EP US)
Citation (search report)
- [XYI] US 2004080979 A1 20040429 - PARK EUNGJOON [US]
- [XAYI] US 2007086239 A1 20070419 - LITSYN SIMON [IL], et al
- [YA] US 6469931 B1 20021022 - BAN AMIR [IL], et al
- [A] US 2007208905 A1 20070906 - LITSYN SIMON [IL], et al
- [A] US 2005013171 A1 20050120 - BAN AMIR [IL], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2009129153 A1 20090521; US 7633798 B2 20091215; CN 101868829 A 20101020; CN 101868829 B 20140129; CN 103680605 A 20140326; CN 103680605 B 20160817; EP 2218074 A1 20100818; EP 2218074 A4 20110105; EP 2218074 B1 20171004; EP 3273443 A1 20180124; EP 3273443 B1 20191113; JP 2011504277 A 20110203; JP 2015043253 A 20150305; JP 5914613 B2 20160511; KR 101125876 B1 20120322; KR 20100093089 A 20100824; TW 200931432 A 20090716; TW 201337944 A 20130916; TW I402854 B 20130721; TW I518702 B 20160121; US 2010091565 A1 20100415; US 2011103145 A1 20110505; US 7872912 B2 20110118; US 8111550 B2 20120207; WO 2009067448 A1 20090528
DOCDB simple family (application)
US 94391607 A 20071121; CN 200880117048 A 20081118; CN 201310711960 A 20081118; EP 08852022 A 20081118; EP 17020367 A 20081118; JP 2010535029 A 20081118; JP 2014208130 A 20141009; KR 20107013374 A 20081118; TW 102120182 A 20081121; TW 97145258 A 20081121; US 2008083915 W 20081118; US 201113005291 A 20110112; US 63860309 A 20091215