Global Patent Index - EP 3298100 A1

EP 3298100 A1 20180328 - METHOD FOR EXPLOITATION OF A SUBTERRANEAN FORMATION BY INJECTION OF A FLUID COMPRISING AN ADDITIVE TAGGED BY A LUMINESCENT SEMICONDUCTOR NANOCRYSTAL

Title (en)

METHOD FOR EXPLOITATION OF A SUBTERRANEAN FORMATION BY INJECTION OF A FLUID COMPRISING AN ADDITIVE TAGGED BY A LUMINESCENT SEMICONDUCTOR NANOCRYSTAL

Title (de)

VERFAHREN ZUR AUSBEUTUNG EINER UNTERIRDISCHEN FORMATION DURCH INJEKTION EINES FLUIDS MIT EINEM DURCH EINEN LUMINESZENTEN HALBLEITERNANOKRISTALL MARKIERTEN ADDITIVS

Title (fr)

PROCEDE D'EXPLOITATION D'UNE FORMATION SOUTERRAINE PAR INJECTION D'UN FLUIDE COMPRENANT UN ADDITIF MARQUE PAR UN NANO-CRISTAL SEMI-CONDUCTEUR LUMINESCENT

Publication

EP 3298100 A1 20180328 (FR)

Application

EP 16717662 A 20160422

Priority

  • FR 1554561 A 20150521
  • EP 2016059045 W 20160422

Abstract (en)

[origin: WO2016184640A1] The present invention relates to a method for exploitation of a subterranean formation, into which at least one fluid is injected. According to the invention, the fluid comprises at least one additive, the additive being tagged by at least one luminescent (fluorescent or phosphorescent) semiconductor nanocrystal. In this way, and by optical analysis of the presence of luminescent semiconductor nanocrystal in a fluid recovered from the subterranean formation, it is possible to determine the presence and/or the amount of additive in the fluid recovered. Given that the semiconductor nanocrystal is either phosphorescent or fluorescent, the additive is rendered easily detectable and quantitatively assayable in the fluids recovered from the subterranean formation.

IPC 8 full level

C09K 8/03 (2006.01); C09K 11/08 (2006.01); E21B 47/10 (2012.01)

CPC (source: EP US)

C09K 8/03 (2013.01 - EP US); C09K 8/032 (2013.01 - US); C09K 8/035 (2013.01 - US); C09K 11/08 (2013.01 - EP US); E21B 47/11 (2020.05 - EP US); E21B 49/008 (2013.01 - US); C09K 2208/10 (2013.01 - EP US); C09K 2208/22 (2013.01 - EP US); C09K 2208/32 (2013.01 - EP US); E21B 21/062 (2013.01 - US); E21B 37/06 (2013.01 - US); E21B 41/02 (2013.01 - US); E21B 43/16 (2013.01 - US); E21B 43/25 (2013.01 - US)

Citation (search report)

See references of WO 2016184640A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2016184640 A1 20161124; EP 3298100 A1 20180328; FR 3036403 A1 20161125; FR 3036403 B1 20170512; US 10738601 B2 20200811; US 2018283173 A1 20181004

DOCDB simple family (application)

EP 2016059045 W 20160422; EP 16717662 A 20160422; FR 1554561 A 20150521; US 201615575666 A 20160422