EP 3304110 A4 20190123 - IMPROVED POWER SUPPLY TRANSIENT PERFORMANCE (POWER INTEGRITY) FOR A PROBE CARD ASSEMBLY IN AN INTEGRATED CIRCUIT TEST ENVIRONMENT
Title (en)
IMPROVED POWER SUPPLY TRANSIENT PERFORMANCE (POWER INTEGRITY) FOR A PROBE CARD ASSEMBLY IN AN INTEGRATED CIRCUIT TEST ENVIRONMENT
Title (de)
VERBESSERTE LEISTUNG VON TRANSIENTER STROMVERSORGUNG (STROMINTEGRITÄT) FÜR EINE SONDENKARTENANORDNUNG IN EINER TESTUMGEBUNG EINER INTEGRIERTEN SCHALTUNG
Title (fr)
PERFORMANCE TRANSITOIRE AMÉLIORÉ D'ALIMENTATION ÉLECTRIQUE (INTÉGRITÉ ÉLECTRIQUE) POUR UN ENSEMBLE CARTE SONDE DANS UN ENVIRONNEMENT DE TEST DE CIRCUIT INTÉGRÉ
Publication
Application
Priority
- US 201562168107 P 20150529
- US 2016019865 W 20160226
Abstract (en)
[origin: WO2016195766A1] The present invention describes essentially three different embodiments for the implementation of low impedance (over frequency) power delivery to a die. Such low impedance to a high frequency allows the die to operate at package-level speed, thus reducing yield loss at the packaging level. Each embodiment addresses a slightly different aspect of the overall wafer probe application, lit each embodiment, however, the critical improvement of this disclosure is the location of the passive components used, for supply filtering/ decoupling relative to prior art. All three embodiments, require a method to embed the passive components in close proximity to the pitch translation substrate or physically in the pitch translation substrate.
IPC 8 full level
G01R 31/28 (2006.01)
CPC (source: EP KR)
G01R 1/07378 (2013.01 - EP KR); G01R 31/2889 (2013.01 - EP KR); G01R 31/31901 (2013.01 - EP KR); G01R 31/31905 (2013.01 - EP KR)
Citation (search report)
- [Y] US 6336269 B1 20020108 - ELDRIDGE BENJAMIN N [US], et al
- [Y] US 2002132501 A1 20020919 - ELDRIDGE BENJAMIN N [US], et al
- [A] US 2015091179 A1 20150402 - SHENOY RAVINDRA VAMAN [US], et al
- [A] US 2010237889 A1 20100923 - DESTA YOHANNES [US], et al
- [A] US 2004239349 A1 20041202 - YAMAGISHI YASUO [JP], et al
- [A] KR 100707044 B1 20070413
- [A] WO 2004001807 A2 20031231 - NANONEXUS INC [US]
- See references of WO 2016195766A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2016195766 A1 20161208; CN 107710004 A 20180216; EP 3304110 A1 20180411; EP 3304110 A4 20190123; JP 2018523135 A 20180816; KR 20180014781 A 20180209; TW 201702613 A 20170116
DOCDB simple family (application)
US 2016019865 W 20160226; CN 201680031122 A 20160226; EP 16803876 A 20160226; JP 2018514774 A 20160226; KR 20177037840 A 20160226; TW 105112114 A 20160419