EP 3310707 A1 20180425 - INTEGRATING MEMS STRUCTURES WITH INTERCONNECTS AND VIAS
Title (en)
INTEGRATING MEMS STRUCTURES WITH INTERCONNECTS AND VIAS
Title (de)
INTEGRATION VON MEMS-STRUKTUREN MIT LEITERBAHNEN UND DURCHKONTAKTIERUNGEN
Title (fr)
INTÉGRATION DE STRUCTURES SYSTÈME MICROÉLECTROMÉCANIQUE (MEMS) COMPRENANT DES INTERCONNEXIONS ET DES TROUS D'INTERCONNEXION
Publication
Application
Priority
US 2015037024 W 20150622
Abstract (en)
[origin: WO2016209207A1] A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.
IPC 8 full level
B81B 7/02 (2006.01); H01L 21/8238 (2006.01)
CPC (source: CN EP KR US)
B81B 7/007 (2013.01 - CN US); B81B 7/02 (2013.01 - KR); B81C 1/00246 (2013.01 - EP KR US); B81C 1/00301 (2013.01 - CN US); H01L 21/7682 (2013.01 - EP KR US); H01L 21/76829 (2013.01 - EP US); B81B 2203/0109 (2013.01 - EP KR US); B81B 2203/0118 (2013.01 - CN EP KR US); B81B 2207/015 (2013.01 - US); B81B 2207/07 (2013.01 - EP KR US); B81B 2207/092 (2013.01 - EP KR US); B81B 2207/094 (2013.01 - US); B81B 2207/095 (2013.01 - EP KR US); B81C 2201/0109 (2013.01 - EP KR US); B81C 2201/014 (2013.01 - US); B81C 2203/0714 (2013.01 - CN EP KR US); B81C 2203/0742 (2013.01 - CN EP KR US); B81C 2203/0771 (2013.01 - CN EP KR US); H01L 21/76807 (2013.01 - EP US); H01L 21/76883 (2013.01 - EP); H01L 21/76897 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2016209207 A1 20161229; CN 107709225 A 20180216; CN 107709225 B 20220426; EP 3310707 A1 20180425; KR 102444153 B1 20220919; KR 20180019527 A 20180226; KR 20220145353 A 20221028; KR 20240013281 A 20240130; TW 201703211 A 20170116; US 10457548 B2 20191029; US 2018086627 A1 20180329
DOCDB simple family (application)
US 2015037024 W 20150622; CN 201580080251 A 20150622; EP 15896501 A 20150622; KR 20177033336 A 20150622; KR 20227031591 A 20150622; KR 20247001874 A 20150622; TW 105115057 A 20160516; US 201515573342 A 20150622