Global Patent Index - EP 3314241 A4

EP 3314241 A4 20190109 - METHODS AND APPARATUS FOR MEASURING HEIGHT ON A SEMICONDUCTOR WAFER

Title (en)

METHODS AND APPARATUS FOR MEASURING HEIGHT ON A SEMICONDUCTOR WAFER

Title (de)

VERFAHREN UND VORRICHTUNG ZUR MESSUNG DER HÖHE AUF EINER HALBLEITERSCHEIBE

Title (fr)

PROCÉDÉS ET APPAREIL PERMETTANT DE MESURER LA HAUTEUR D'UNE TRANCHE DE SEMI-CONDUCTEUR

Publication

EP 3314241 A4 20190109 (EN)

Application

EP 16818625 A 20160628

Priority

  • US 201562186215 P 20150629
  • US 201615192962 A 20160624
  • US 2016039900 W 20160628

Abstract (en)

[origin: US2016377412A1] Disclosed are apparatus and methods for determining height of a semiconductor structure. The system includes an illumination module for directing one or more source lines or points towards a specimen having multiple surfaces at different relative heights and a collection module for detecting light reflected from the surfaces. The collection module contains at least two detectors with one slit or pinhole in front of each detector that that are positioned to receive light reflected from one of the surfaces. A first detector receives reflected light from a slit or pinhole that is positioned before a focal point, and a second detector receive reflected light from a slit or pinhole that is positioned after the focal point so that the first and second detector receive light having different intensity values unless the surface is at an optimum focus. The system includes a processor system for determining a height based on the detected light received by the detectors from two of the surfaces.

IPC 8 full level

G01N 21/88 (2006.01); G01N 21/89 (2006.01); G02B 21/00 (2006.01)

CPC (source: CN EP KR US)

G01B 11/0608 (2013.01 - CN EP US); G01B 11/0641 (2013.01 - CN EP US); G01N 21/8806 (2013.01 - KR); G01N 21/89 (2013.01 - KR); G01N 21/9501 (2013.01 - EP US); G01N 21/956 (2013.01 - CN EP US); G02B 21/0032 (2013.01 - KR); H01L 22/12 (2013.01 - CN EP US); G01B 2210/56 (2013.01 - CN EP US); G01N 2021/8905 (2013.01 - KR)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

US 10495446 B2 20191203; US 2016377412 A1 20161229; CN 107683400 A 20180209; CN 107683400 B 20210126; EP 3314241 A1 20180502; EP 3314241 A4 20190109; EP 3314241 B1 20230816; JP 2018519524 A 20180719; JP 6882209 B2 20210602; KR 20180014435 A 20180208; TW 201710668 A 20170316; TW I721993 B 20210321; WO 2017004089 A1 20170105

DOCDB simple family (application)

US 201615192962 A 20160624; CN 201680032048 A 20160628; EP 16818625 A 20160628; JP 2017568049 A 20160628; KR 20187002168 A 20160628; TW 105120616 A 20160629; US 2016039900 W 20160628