EP 3314667 A4 20190227 - LOW DAMAGE SELF-ALIGNED AMPHOTERIC FINFET TIP DOPING
Title (en)
LOW DAMAGE SELF-ALIGNED AMPHOTERIC FINFET TIP DOPING
Title (de)
DOTIERUNG EINER SELBSTAUSGERICHTETEN AMPHOTEREN FINFET-SPITZE MIT GERINGER SCHÄDIGUNG
Title (fr)
DOPAGE AMPHOTÈRE AUTO-ALIGNÉ À FAIBLE ENDOMMAGEMENT DE POINTE DE FINFET
Publication
Application
Priority
US 2015038197 W 20150627
Abstract (en)
[origin: WO2017003414A1] Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over exposed fin sidewalls and diffused into the first III-V compound semiconductor material. The amphoteric dopant preferentially activates as a donor within the first III-V material and an acceptor with the second III-V material, providing transistor tip doping with a p-n junction between the first and second III-V materials. A lateral spacer is deposited to cover the tip portion of the fin. Source/drain regions in regions of the fin not covered by the mask or spacer electrically couple to the channel through the tip region. The channel mask is replaced with a gate stack.
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 21/8238 (2006.01)
CPC (source: EP KR)
H01L 21/2258 (2013.01 - EP); H01L 21/8238 (2013.01 - KR); H01L 21/8258 (2013.01 - EP KR); H01L 27/0924 (2013.01 - EP KR); H01L 29/1054 (2013.01 - EP); H01L 29/66522 (2013.01 - EP); H01L 29/66545 (2013.01 - EP); H01L 29/66795 (2013.01 - KR); H01L 29/66803 (2013.01 - EP); H01L 29/785 (2013.01 - EP KR); H01L 29/205 (2013.01 - EP)
Citation (search report)
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- [XI] US 2014264446 A1 20140918 - BASU ANIRBAN [US], et al
- [X] US 2014353574 A1 20141204 - LI XIULING [US], et al
- [I] WO 2014209390 A1 20141231 - INTEL CORP [US]
- [A] US 4035205 A 19770712 - LEBAILLY JACQUES, et al
- [A] US 2014332900 A1 20141113 - BASU ANIRBAN [US], et al
- [A] EP 0565054 A2 19931013 - HUGHES AIRCRAFT CO [US]
- [A] SCHUBERT, E. FRED: "Doping in III-V semiconductors", 1993, CAMBRIDGE UNIVERSITY PRESS, ISBN: 0 521 41919 0, pages: 181 - 207, XP002787962
- See references of WO 2017003414A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017003414 A1 20170105; CN 107636838 A 20180126; CN 107636838 B 20220114; EP 3314667 A1 20180502; EP 3314667 A4 20190227; KR 102352659 B1 20220118; KR 20180021157 A 20180228; TW 201711204 A 20170316; TW I706567 B 20201001
DOCDB simple family (application)
US 2015038197 W 20150627; CN 201580080418 A 20150627; EP 15897305 A 20150627; KR 20187002563 A 20150627; TW 105116289 A 20160525