EP 3314674 A1 20180502 - PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT
Title (en)
PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT
Title (de)
SENKRECHTER MAGNETSPEICHER MIT REDUZIERTEM SCHALTSTROM
Title (fr)
MÉMOIRE MAGNÉTIQUE PERPENDICULAIRE À COURANT DE COMMUTATION RÉDUIT
Publication
Application
Priority
US 2015037945 W 20150626
Abstract (en)
[origin: WO2016209257A1] An embodiment includes an apparatus comprising: a substrate; and a perpendicular magnetic tunnel junction (pMTJ) comprising a fixed layer and first and second free layers; wherein (a) the first free layer includes Cobalt (Co), Iron (Fe), and Boron (B), and (b) the second free layer is epitaxial and includes Manganese (Mn) and Gallium (Ga). Other embodiments are described herein.
IPC 8 full level
H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01)
CPC (source: CN EP KR US)
H10B 61/00 (2023.02 - US); H10B 61/22 (2023.02 - US); H10N 50/01 (2023.02 - KR); H10N 50/10 (2023.02 - CN EP KR US); H10N 50/80 (2023.02 - KR US); H10N 50/85 (2023.02 - CN EP KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2016209257 A1 20161229; CN 107667438 A 20180206; CN 107667438 B 20210907; EP 3314674 A1 20180502; EP 3314674 A4 20190227; KR 102384258 B1 20220407; KR 20180022837 A 20180306; TW 201724595 A 20170701; US 10522739 B2 20191231; US 2018301619 A1 20181018
DOCDB simple family (application)
US 2015037945 W 20150626; CN 201580080340 A 20150626; EP 15896543 A 20150626; KR 20187002134 A 20150626; TW 105115993 A 20160523; US 201515735616 A 20150626