EP 3324440 A1 20180523 - LOW RESISTANCE AND LEAKAGE DEVICE
Title (en)
LOW RESISTANCE AND LEAKAGE DEVICE
Title (de)
VORRICHTUNG MIT NIEDRIGEM WIDERSTAND UND NIEDRIGER LECKAGE
Title (fr)
DISPOSITIF DE FUITE ET À FAIBLE RÉSISTANCE
Publication
Application
Priority
US 201615355769 A 20161118
Abstract (en)
A heterojunction semiconductor device is disclosed. The heterojunction semiconductor device includes a substrate and a multilayer structure disposed on the substrate. The multilayer structure includes a first layer comprising a first semiconductor disposed on top of the substrate, and a second layer comprising a second semiconductor disposed on top of the first layer to define an interface between the first layer and the second layer. The second semiconductor is different from the first semiconductor such that a Two-Dimensional Electron Gas forms adjacent to the interface. The device also includes a first terminal electrically coupled to a first area of the interface between the first layer and second layer and a second terminal electrically coupled to a second area of the interface between the first layer and second layer. The device also includes an electrically conducting channel comprising an implanted region at bottom and sidewalls. The electrically conducting channel is filled with a metal and the electrically conducting channel connects the second terminal and a region of the first layer such that electric charge can flow between the second terminal and the first layer.
IPC 8 full level
H01L 29/417 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01)
CPC (source: CN EP US)
H01L 29/0638 (2013.01 - CN); H01L 29/1029 (2013.01 - CN); H01L 29/2003 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US); H01L 29/475 (2013.01 - US); H01L 29/7781 (2013.01 - CN); H01L 29/7786 (2013.01 - CN EP US); H01L 29/7787 (2013.01 - US); H01L 29/872 (2013.01 - EP US)
Citation (applicant)
US 9391187 B2 20160712 - HURKX GODEFRIDUS ADRIANUS MARIA [NL], et al
Citation (search report)
- [XI] US 2015041860 A1 20150212 - NISHIMORI MASATO [JP], et al
- [XI] US 2013126893 A1 20130523 - TANAKA MASAYASU [JP]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3324440 A1 20180523; CN 108074964 A 20180525; CN 108074964 B 20221021; US 10388778 B2 20190820; US 2018145165 A1 20180524
DOCDB simple family (application)
EP 17190240 A 20170908; CN 201711144428 A 20171117; US 201615355769 A 20161118