EP 3335242 A4 20190410 - SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
Title (en)
SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
Title (de)
HALBLEITERSTRUKTUR MIT EINER ABSTANDSSCHICHT
Title (fr)
STRUCTURE SEMI-CONDUCTRICE AVEC COUCHE D'ESPACEMENT
Publication
Application
Priority
- US 201562203438 P 20150811
- US 201615094985 A 20160408
- US 2016046546 W 20160811
Abstract (en)
[origin: WO2017027704A1] A multi-layer semiconductor structure is disclosed for use in Ill-Nitride semiconductor devices, including a channel layer, a band-offset layer having a wider bandgap than the channel layer, a spacer layer having a narrower bandgap than the band-offset layer, and a cap layer comprising at least two sublayers. Each sublayer is selectively etchable with respect to sublayers immediately below and above, each sublayer comprises a III-N material A1ϰINγGazN in which 0≤x≤1,0≤y≤1, and 0≤z≤1, at least one sublayer has a non-zero Ga content, and a sublayer immediately above the spacer layer has a wider bandgap than the spacer layer. Also described are methods for fabricating such semiconductor structures, with gate and/or ohmic recesses formed by selectively removing adjacent layers or sublayers. The performance of resulting devices is improved, while providing design flexibility to reduce production cost and circuit footprint.
IPC 8 full level
H01L 29/778 (2006.01); H01L 21/336 (2006.01); H01L 27/14 (2006.01); H01L 29/205 (2006.01); H01L 29/872 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP)
H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/432 (2013.01)
Citation (search report)
- [XI] US 2008237605 A1 20081002 - MURATA TOMOHIRO [JP], et al
- [XI] US 2013256829 A1 20131003 - KIKKAWA TOSHIHIDE [JP]
Citation (examination)
- TETSU KACHI ET AL: "GaN power device and reliability for automotive applications", RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 IEEE INTERNATIONAL, IEEE, 15 April 2012 (2012-04-15), pages 3D.1.1 - 3D.1.4, XP032204901, ISBN: 978-1-4577-1678-2, DOI: 10.1109/IRPS.2012.6241815
- See also references of WO 2017027704A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017027704 A1 20170216; CN 107924939 A 20180417; EP 3335242 A1 20180620; EP 3335242 A4 20190410
DOCDB simple family (application)
US 2016046546 W 20160811; CN 201680048524 A 20160811; EP 16835909 A 20160811