EP 3336981 A1 20180620 - SEMICONDUCTOR MULTILAYER FILM REFLECTING MIRROR, VERTICAL CAVITY LIGHT-EMITTING ELEMENT USING THE REFLECTING MIRROR, AND METHODS FOR MANUFACTURING THE REFLECTING MIRROR AND THE ELEMENT
Title (en)
SEMICONDUCTOR MULTILAYER FILM REFLECTING MIRROR, VERTICAL CAVITY LIGHT-EMITTING ELEMENT USING THE REFLECTING MIRROR, AND METHODS FOR MANUFACTURING THE REFLECTING MIRROR AND THE ELEMENT
Title (de)
HALBLEITER-MEHRSCHICHTFILM-REFLEXIONSSPIEGEL, LICHTEMITTIERENDES ELEMENT MIT VERTIKALEM RESONATOR MIT DEM REFLEKTIERENDEN SPIEGEL UND VERFAHREN ZUR HERSTELLUNG DES REFLEKTIERENDEN SPIEGELS UND DES ELEMENTS
Title (fr)
MIROIR RÉFLÉCHISSANT À FILM MULTICOUCHE SEMI-CONDUCTEUR ET ÉLÉMENT ÉLECTROLUMINESCENT À CAVITÉ VERTICALE FAISANT APPEL AU MIROIR RÉFLÉCHISSANT ET PROCÉDÉS DE FABRICATION DU MIROIR RÉFLÉCHISSANT ET DE L'ÉLÉMENT
Publication
Application
Priority
JP 2016241273 A 20161213
Abstract (en)
Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror (15) includes an inter-film transition layer (15C) between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer (15C1) formed on the first nitride film and containing In and Al (aluminum), and a second transition layer (15C2) formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al. The mirror is a DBR reflecting in the blue and reducing the number of micro-cracks in the device. The DBR (15) may be integrated into a VCSEL (10), the VCSEL comprising a GaN substrate (11), a GaN buffer layer (13), the DBR (15), a p-clad layer (17), an active layer (20), an upper clad layer p-AlGaN (21), a p-GaN layer (23) and a p-GaN contact layer (25). The first nitride film (15A) may be made from AlInN, the first transition layer (15C1) from AlGaInN, the second transition layer (15C2) from AlGaN and the second nitride film (15B) from GaN.
IPC 8 full level
H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01)
CPC (source: EP US)
H01L 21/02458 (2013.01 - EP); H01L 21/02507 (2013.01 - EP); H01L 21/0254 (2013.01 - EP); H01L 21/02576 (2013.01 - EP); H01L 21/02579 (2013.01 - EP); H01L 21/0262 (2013.01 - EP); H01S 5/026 (2013.01 - US); H01S 5/18361 (2013.01 - EP US); H01S 5/18377 (2013.01 - US); H01L 21/02365 (2013.01 - US); H01S 5/18341 (2013.01 - EP US); H01S 5/18369 (2013.01 - EP US); H01S 5/3063 (2013.01 - EP US); H01S 5/3201 (2013.01 - EP US); H01S 5/32341 (2013.01 - EP US); H01S 2304/04 (2013.01 - EP US)
Citation (applicant)
JOURNAL OF CRYSTAL GROWTH, vol. 414, 2015, pages 105
Citation (search report)
- [Y] US 2008217645 A1 20080911 - SAXLER ADAM WILLIAM [US], et al
- [Y] FURUTA TAKASHI ET AL: "1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs", 2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), IEICE-ES, 12 September 2016 (2016-09-12), pages 1 - 2, XP033016329
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3336981 A1 20180620; EP 3336981 B1 20210106; JP 2018098347 A 20180621; JP 6819956 B2 20210127; US 10411438 B2 20190910; US 2018166855 A1 20180614
DOCDB simple family (application)
EP 17206519 A 20171211; JP 2016241273 A 20161213; US 201715836601 A 20171208