EP 3337758 A1 20180627 - METHOD FOR THE THERMAL TREATMENT OF GRANULAR MATERIAL COMPOSED OF SILICON, GRANULAR MATERIAL COMPOSED OF SILICON, AND METHOD FOR PRODUCING A MONOCRYSTAL COMPOSED OF SILICON
Title (en)
METHOD FOR THE THERMAL TREATMENT OF GRANULAR MATERIAL COMPOSED OF SILICON, GRANULAR MATERIAL COMPOSED OF SILICON, AND METHOD FOR PRODUCING A MONOCRYSTAL COMPOSED OF SILICON
Title (de)
VERFAHREN ZUR WÄRMEBEHANDLUNG VON GRANULAT AUS SILIZIUM, GRANULAT AUS SILIZIUM UND VERFAHREN ZUR HERSTELLUNG EINES EINKRISTALLS AUS SILIZIUM
Title (fr)
PROCÉDÉ DE TRAITEMENT THERMIQUE DE GRANULÉS EN SILICIUM, GRANULÉS EN SILICIUM ET PROCÉDÉ DE FABRICATION D'UN MONOCRISTAL EN SILICIUM
Publication
Application
Priority
- DE 102015215858 A 20150820
- EP 2016065465 W 20160701
Abstract (en)
[origin: WO2017029010A1] The invention relates to a method for the thermal treatment of granular material composed of silicon, which consists of polycrystalline grains, to a method for producing a monocrystal composed of silicon, in the course of which thermally treated granular material composed of silicon is used, and to thermally treated granular material composed of silicon. The method for the thermal treatment of granular material composed of silicon comprises: conducting a process gas through a plasma chamber in a flow direction; producing a plasma zone in the plasma chamber; maintaining the plasma zone by feeding microwave radiation into the plasma chamber; pre-heating the granular material composed of silicon to a temperature of not less than 900 °C by means of the process gas; transporting the pre-heated granular material composed of silicon through the plasma chamber and the plasma zone against the flow direction of the process gas, wherein an outer region of the grains is temporarily melted; and collecting the plasma-treated granular material composed of silicon.
IPC 8 full level
C01B 33/02 (2006.01); C30B 13/00 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01)
CPC (source: EP KR US)
C01B 33/02 (2013.01 - EP KR US); C30B 13/00 (2013.01 - EP US); C30B 13/20 (2013.01 - US); C30B 13/22 (2013.01 - US); C30B 13/28 (2013.01 - US); C30B 15/16 (2013.01 - KR); C30B 29/06 (2013.01 - EP KR US); C30B 35/007 (2013.01 - EP KR US); B01J 2219/0894 (2013.01 - KR); C01P 2002/60 (2013.01 - EP KR US)
Citation (search report)
See references of WO 2017029010A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2017029010 A1 20170223; CN 107922196 A 20180417; DE 102015215858 A1 20170309; DE 102015215858 B4 20190124; EP 3337758 A1 20180627; JP 2018523625 A 20180823; JP 6608041 B2 20191120; KR 102069984 B1 20200123; KR 20180041723 A 20180424; TW 201708636 A 20170301; TW I609999 B 20180101; US 2018194633 A1 20180712
DOCDB simple family (application)
EP 2016065465 W 20160701; CN 201680048555 A 20160701; DE 102015215858 A 20150820; EP 16733098 A 20160701; JP 2018508631 A 20160701; KR 20187007609 A 20160701; TW 105125161 A 20160808; US 201615742306 A 20160701