Global Patent Index - EP 3353339 A4

EP 3353339 A4 20190508 - VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING HIGH PURITY POLYMER DERIVED SILICON CARBIDE

Title (en)

VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING HIGH PURITY POLYMER DERIVED SILICON CARBIDE

Title (de)

DAMPFABSCHEIDUNGSVORRICHTUNG UND VERFAHREN MIT HOCHREINEM SILICIUMCARBID AUS POLYMER

Title (fr)

APPAREIL DE DÉPÔT EN PHASE VAPEUR ET TECHNIQUES FAISANT INTERVENIR DU CARBURE DE SILICIUM DÉRIVÉ DE POLYMÈRE HAUTE PURETÉ

Publication

EP 3353339 A4 20190508 (EN)

Application

EP 16849805 A 20160923

Priority

  • US 201562232355 P 20150924
  • US 2016053567 W 20160923

Abstract (en)

[origin: WO2017053883A1] Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

IPC 8 full level

C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 35/00 (2006.01)

CPC (source: CN EP)

C30B 23/02 (2013.01 - EP); C30B 25/02 (2013.01 - CN); C30B 25/20 (2013.01 - CN); C30B 29/36 (2013.01 - CN EP); C30B 35/007 (2013.01 - EP)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2017053883 A1 20170330; CN 108463580 A 20180828; CN 108463580 B 20211112; CN 114000197 A 20220201; EP 3353339 A1 20180801; EP 3353339 A4 20190508; TW 201821656 A 20180616; TW 202117101 A 20210501; TW 202244337 A 20221116; TW 202413743 A 20240401; TW I719164 B 20210221; TW I770769 B 20220711; TW I820738 B 20231101

DOCDB simple family (application)

US 2016053567 W 20160923; CN 201680067713 A 20160923; CN 202111220327 A 20160923; EP 16849805 A 20160923; TW 106108822 A 20170317; TW 110101573 A 20170317; TW 111121236 A 20170317; TW 112147396 A 20170317