EP 3355342 A1 20180801 - LASER ASSISTED SOLDER BONDING OF DIRECT CONVERSION COMPOUND SEMICONDUCTOR DETECTOR
Title (en)
LASER ASSISTED SOLDER BONDING OF DIRECT CONVERSION COMPOUND SEMICONDUCTOR DETECTOR
Title (de)
LASERUNTERSTÜTZTE LÖTVERBINDUNG EINES DIREKTUMWANDLUNGSVERBINDUNGSHALBLEITERDETEKTORS
Title (fr)
LIAISON PAR BRASURE ASSISTÉE PAR LASER DE DÉTECTEUR À SEMI-CONDUCTEUR DE COMPOSÉ À CONVERSION DIRECTE
Publication
Application
Priority
EP 17153476 A 20170127
Abstract (en)
In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.
IPC 8 full level
H01L 21/60 (2006.01)
CPC (source: EP US)
B23K 1/0056 (2013.01 - US); H01L 24/11 (2013.01 - US); H01L 24/14 (2013.01 - US); H01L 24/16 (2013.01 - US); H01L 24/81 (2013.01 - EP US); H01L 24/92 (2013.01 - EP US); H01L 27/14636 (2013.01 - EP US); H01L 27/14661 (2013.01 - EP US); H01L 27/1469 (2013.01 - EP US); H01L 24/11 (2013.01 - EP); H01L 2224/0401 (2013.01 - EP US); H01L 2224/05569 (2013.01 - EP); H01L 2224/11312 (2013.01 - EP); H01L 2224/11318 (2013.01 - EP); H01L 2224/131 (2013.01 - EP); H01L 2224/13111 (2013.01 - EP); H01L 2224/1403 (2013.01 - EP US); H01L 2224/14181 (2013.01 - EP); H01L 2224/16145 (2013.01 - EP); H01L 2224/16227 (2013.01 - EP US); H01L 2224/81191 (2013.01 - EP); H01L 2224/81192 (2013.01 - EP); H01L 2224/81201 (2013.01 - EP); H01L 2224/81224 (2013.01 - EP US); H01L 2224/81801 (2013.01 - US); H01L 2224/81815 (2013.01 - EP); H01L 2224/81986 (2013.01 - EP); H01L 2224/9202 (2013.01 - EP); H01L 2924/014 (2013.01 - US); H05K 2201/10734 (2013.01 - US)
C-Set (source: EP)
Citation (search report)
- [XY] US 2016015339 A1 20160121 - DANZER LUDWIG [DE], et al
- [XA] DE 102008050838 A1 20091015 - SIEMENS AG [DE]
- [Y] JP 2007214271 A 20070823 - ZYCUBE KK
- [A] US 2007037318 A1 20070215 - KIM SANG-CHEOL [KR]
- [A] DE 4446289 A1 19960627 - FINN DAVID [DE], et al
- [A] ZEQUN MEI ET AL: "LOW-TEMPERATURE SOLDERS", HEWLETT-PACKARD JOURNAL, HEWLETT-PACKARD CO. PALO ALTO, US, vol. 47, no. 4, 1 August 1996 (1996-08-01), pages 91 - 98, XP000621968
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3355342 A1 20180801; CN 110226221 A 20190910; JP 2020508560 A 20200319; US 11069649 B2 20210720; US 2019378815 A1 20191212; WO 2018138174 A1 20180802
DOCDB simple family (application)
EP 17153476 A 20170127; CN 201880008432 A 20180125; EP 2018051765 W 20180125; JP 2019539828 A 20180125; US 201816478676 A 20180125