EP 3357083 B1 20201014 - METHOD FOR DEPOSITING A SEMICONDUCTOR LAYER ON A SEMICONDUCTOR FILM BY PHOTOCATALYSIS
Title (en)
METHOD FOR DEPOSITING A SEMICONDUCTOR LAYER ON A SEMICONDUCTOR FILM BY PHOTOCATALYSIS
Title (de)
VERFAHREN ZUR ABSCHEIDUNG EINER HALBLEITENDEN SCHICHT AUF EINER HALBLEITERFILM DURCH FOTOKATALYSE
Title (fr)
PROCÉDÉ DE DÉPÔT D'UNE COUCHE SEMI-CONDUCTRICE SUR UN FILM SEMI-CONDUCTEUR PAR PHOTOCATALYSE
Publication
Application
Priority
- FR 1559379 A 20151002
- EP 2016073336 W 20160929
Abstract (en)
[origin: WO2017055496A1] The invention relates to a method for depositing a semiconductor thin layer (CM) comprising at least one sulphide of a metal species, the deposition being performed on a semiconductor film (F) arranged in a chemical bath (BC), the method comprising the steps of: preparing the chemical bath (BC) using at least one sulphurated precursor of said sulphide of a metal species and a salt containing said at least one metal species, the at least one sulphurated precursor containing a thioacid; and forming the thin layer (CM) by illumination by means of a light source (S) of the chemical bath (BC) and the semi-conductive film (F).
IPC 8 full level
C23C 18/14 (2006.01); H01L 21/368 (2006.01)
CPC (source: EP US)
C23C 18/1204 (2013.01 - EP); C23C 18/143 (2019.04 - EP US); H01L 21/02557 (2013.01 - EP); H01L 21/02568 (2013.01 - EP US); H01L 21/02628 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017055496 A1 20170406; EP 3357083 A1 20180808; EP 3357083 B1 20201014; FR 3042068 A1 20170407; FR 3042068 B1 20180615
DOCDB simple family (application)
EP 2016073336 W 20160929; EP 16777659 A 20160929; FR 1559379 A 20151002