Global Patent Index - EP 3369115 A1

EP 3369115 A1 20180905 - FIELD-EFFECT TRANSISTOR WITH OPTIMISED PERFORMANCE AND GAIN

Title (en)

FIELD-EFFECT TRANSISTOR WITH OPTIMISED PERFORMANCE AND GAIN

Title (de)

FELDEFFEKTTRANSISTOR MIT OPTIMIERTER LEISTUNG UND VERSTÄRKUNG

Title (fr)

TRANSISTOR A EFFET DE CHAMP A RENDEMENT ET GAIN OPTIMISE

Publication

EP 3369115 A1 20180905 (FR)

Application

EP 16790546 A 20161027

Priority

  • FR 1502296 A 20151030
  • EP 2016075971 W 20161027

Abstract (en)

[origin: WO2017072249A1] The invention relates to a transistor which includes a stack of semiconductor materials including, in particular, a first sub-layer (16), carefully arranged and with a specific thickness, splitting the buffer layer (12) into two portions (12a; 12b) and including a third material (Mat3) so that the difference in the piezoelectric and spontaneous polarisation coefficients between the material of the buffer layer and the third material (Mat3) induces, at a first interface (17) between the first portion of the buffer layer (12a) and the first sub-layer (16), a first fixed surface electric charge generating an electrical field directed along the axis z so as to allow the two-dimensional gas (9) to be contained in the channel.

IPC 8 full level

H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/201 (2006.01); H01L 29/207 (2006.01)

CPC (source: EP US)

H01L 29/2003 (2013.01 - EP US); H01L 29/201 (2013.01 - EP US); H01L 29/205 (2013.01 - US); H01L 29/7783 (2013.01 - EP US); H01L 29/207 (2013.01 - EP US)

Citation (search report)

See references of WO 2017072249A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2017072249 A1 20170504; CN 108475696 A 20180831; EP 3369115 A1 20180905; FR 3043251 A1 20170505; FR 3043251 B1 20221111; JP 2018536285 A 20181206; US 2018308966 A1 20181025

DOCDB simple family (application)

EP 2016075971 W 20161027; CN 201680077236 A 20161027; EP 16790546 A 20161027; FR 1502296 A 20151030; JP 2018522143 A 20161027; US 201615769708 A 20161027