EP 3369702 A1 20180905 - INTERNAL SPACERS FOR NANOWIRE SEMICONDUCTOR DEVICES
Title (en)
INTERNAL SPACERS FOR NANOWIRE SEMICONDUCTOR DEVICES
Title (de)
INTERNE ABSTANDSHALTER FÜR NANODRAHTHALBLEITERBAUELEMENTE
Title (fr)
ESPACEURS INTERNES POUR DISPOSITIFS SEMI-CONDUCTEURS À NANOFILS
Publication
Application
Priority
EP 17159054 A 20170303
Abstract (en)
A method (100) of forming an internal spacer between nanowires: providing (110) a fin comprising a stack of layers of sacrificial material (4) alternated with nanowire material (3); selectively removing (130) part of the sacrificial material (4), thereby forming a recess (5); depositing (140) dielectric material (10) into the recess (5) resulting in dielectric material within the recess (5) and excess dielectric material outside the recess (5) wherein a crevice (11) is remaining in the dielectric material in each recess (5); removing (150) the excess dielectric material using a first etchant; enlarging (160) the crevices (11), to form a gap (12), using a second etchant such that remaining dielectric material still covers the sacrificial material and partly covers the nanowire material such that outer ends are accessible; growing (170) source / drain electrode material on the outer ends such that the electrode material from neighbouring outer ends merges thereby covering the gap (12).
IPC 8 full level
B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/775 (2006.01)
CPC (source: CN EP US)
B82Y 10/00 (2013.01 - CN EP US); B82Y 40/00 (2013.01 - EP US); H01L 21/823425 (2013.01 - US); H01L 29/0649 (2013.01 - CN); H01L 29/0653 (2013.01 - EP US); H01L 29/0669 (2013.01 - US); H01L 29/0673 (2013.01 - EP US); H01L 29/0847 (2013.01 - US); H01L 29/41725 (2013.01 - EP US); H01L 29/66439 (2013.01 - CN EP US); H01L 29/6653 (2013.01 - US); H01L 29/66545 (2013.01 - CN US); H01L 29/66553 (2013.01 - US); H01L 29/66795 (2013.01 - CN); H01L 29/6681 (2013.01 - US); H01L 29/775 (2013.01 - CN EP US); H01L 29/785 (2013.01 - CN); H01L 21/31111 (2013.01 - US); H01L 21/31116 (2013.01 - US)
Citation (applicant)
YANG: "Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena", vol. 28, 7 January 2010, AMERICAN VACUUM SOCIETY, article "Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSi modules", pages: 56
Citation (search report)
- [IY] US 2012007051 A1 20120112 - BANGSARUNTIP SARUNYA [US], et al
- [Y] US 2016172358 A1 20160616 - HATCHER RYAN M [US], et al
- [E] US 2017110554 A1 20170420 - TAK YONG-SUK [KR], et al
- [A] US 9362355 B1 20160607 - CHENG KANGGUO [US], et al
- [A] US 2015372115 A1 20151224 - KOH SHAO-MING [US], et al
- [A] US 8785981 B1 20140722 - CHANG JOSEPHINE B [US], et al
- [A] US 9276064 B1 20160301 - ZANG HUI [US], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3369702 A1 20180905; CN 108538913 A 20180914; CN 108538913 B 20200623; US 10361268 B2 20190723; US 2018254321 A1 20180906
DOCDB simple family (application)
EP 17159054 A 20170303; CN 201810175021 A 20180302; US 201815907878 A 20180228