EP 3380649 B1 20191030 - PLATING BATH COMPOSITION AND METHOD FOR ELECTROLESS PLATING OF PALLADIUM
Title (en)
PLATING BATH COMPOSITION AND METHOD FOR ELECTROLESS PLATING OF PALLADIUM
Title (de)
PLATTIERBADZUSAMMENSETZUNG UND VERFAHREN ZUM STROMLOSEN PLATTIEREN VON PALLADIUM
Title (fr)
COMPOSITION DE BAIN DE PLACAGE ET PROCÉDÉ POUR DÉPÔT AUTOCATALYTIQUE DE PALLADIUM
Publication
Application
Priority
- EP 15196799 A 20151127
- EP 2016079008 W 20161128
Abstract (en)
[origin: WO2017089610A1] The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
IPC 8 full level
C23C 18/44 (2006.01); H01L 21/288 (2006.01); H05K 3/24 (2006.01)
CPC (source: EP KR US)
C23C 18/1642 (2013.01 - KR); C23C 18/1683 (2013.01 - EP KR US); C23C 18/44 (2013.01 - EP KR US); H01L 21/288 (2013.01 - US); H05K 3/181 (2013.01 - KR); H05K 3/187 (2013.01 - EP US); H05K 3/244 (2013.01 - EP US); C23C 18/1651 (2013.01 - EP US); C23C 18/32 (2013.01 - EP US); H05K 2203/072 (2013.01 - US); H05K 2203/0736 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017089610 A1 20170601; CN 108291307 A 20180717; CN 108291307 B 20200214; EP 3380649 A1 20181003; EP 3380649 B1 20191030; JP 2019500493 A 20190110; JP 6991139 B2 20220112; KR 102070536 B1 20200129; KR 20180081819 A 20180717; PL 3380649 T3 20200518; PT 3380649 T 20200203; TW 201723226 A 20170701; TW I707061 B 20201011; US 10513780 B2 20191224; US 2018340260 A1 20181129
DOCDB simple family (application)
EP 2016079008 W 20161128; CN 201680069145 A 20161128; EP 16801528 A 20161128; JP 2018527088 A 20161128; KR 20187018109 A 20161128; PL 16801528 T 20161128; PT 16801528 T 20161128; TW 105138828 A 20161125; US 201615778242 A 20161128