EP 3384534 A1 20181010 - OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES WITH A WIDER SINGLE-CRYSTAL PORTION
Title (en)
OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES WITH A WIDER SINGLE-CRYSTAL PORTION
Title (de)
OPTOELEKTRONISCHE VORRICHTUNG MIT DREIDIMENSIONALEN HALBLEITERSTRUKTUREN MIT EINEM GRÖSSEREN EINKRISTALLTEIL
Title (fr)
DISPOSITIF OPTOELECTRONIQUE COMPORTANT DES STRUCTURES SEMICONDUCTRICES TRIDIMENSIONNELLES A PORTION MONOCRISTALLINE ELARGIE
Publication
Application
Priority
- FR 1561587 A 20151130
- FR 2016053121 W 20161128
Abstract (en)
[origin: WO2017093645A1] The invention relates to an optoelectronic device (1), comprising at least one microwire or nanowire (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3), and comprising: - a first doped portion (10) produced from a first semiconductor compound; - an active zone (30) extending from the first doped portion (10); - a second doped portion (20), at least partially covering the active zone (30); characterised in that the active zone comprises a wider single-crystal portion (31): - formed of a single crystal of a second semiconductor compound made from a mixture of the first semiconductor compound and at least one additional element; - extending from an upper face (14) of one end (11) of the first doped portion (10), and - having a mean diameter greater than that of the first doped portion.
IPC 8 full level
H01L 31/0352 (2006.01); H01L 31/0304 (2006.01)
CPC (source: EP US)
H01L 31/03044 (2013.01 - EP); H01L 31/03048 (2013.01 - EP US); H01L 31/035227 (2013.01 - EP); H01L 31/035236 (2013.01 - EP US); H01L 31/035281 (2013.01 - US); H01L 31/1848 (2013.01 - US); H01L 31/1852 (2013.01 - US); H01L 33/007 (2013.01 - US); H01L 33/06 (2013.01 - US); H01L 33/24 (2013.01 - US); H01L 33/32 (2013.01 - US); H01L 33/0025 (2013.01 - US)
Citation (search report)
See references of WO 2017093645A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
FR 3044469 A1 20170602; FR 3044469 B1 20180309; EP 3384534 A1 20181010; US 11049997 B2 20210629; US 2020313042 A1 20201001; WO 2017093645 A1 20170608
DOCDB simple family (application)
FR 1561587 A 20151130; EP 16813091 A 20161128; FR 2016053121 W 20161128; US 201615779727 A 20161128