EP 3387668 A1 20181017 - III-NITRIDE STRUCTURES GROWN SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS
Title (en)
III-NITRIDE STRUCTURES GROWN SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS
Title (de)
AUF SILIXIUMSUBSTRATEN GEZÜCHTETE III-NITRID-STRUKTUREN MIT ERHÖHTER DRUCKEIGENSPANNUNG
Title (fr)
SUBSTRATS EN SILICIUM OBTENUS PAR CROISSANCE AVEC STRUCTURES AU NITRURE III PRÉSENTANT UNE CONTRAINTE DE COMPRESSION ACCRUE
Publication
Application
Priority
- US 201562265927 P 20151210
- US 2016065019 W 20161205
IPC 8 full level
H01L 21/02 (2006.01)
CPC (source: EP US)
H01L 21/02381 (2013.01 - EP); H01L 21/02458 (2013.01 - EP); H01L 21/0254 (2013.01 - EP); H01L 21/0257 (2013.01 - EP); H01L 21/0262 (2013.01 - EP); H01L 29/2003 (2013.01 - US); H01L 29/207 (2013.01 - US); H01L 29/36 (2013.01 - US); H01L 29/66431 (2013.01 - US); H01L 29/7787 (2013.01 - US)
Citation (search report)
See references of WO 2017100141A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DOCDB simple family (application)
EP 16822298 A 20161205