EP 3394324 A1 20181031 - METHOD FOR THE PRODUCTION OF A SINGLE-CRYSTAL FILM, IN PARTICULAR PIEZOELECTRIC
Title (en)
METHOD FOR THE PRODUCTION OF A SINGLE-CRYSTAL FILM, IN PARTICULAR PIEZOELECTRIC
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER EINKRISTALLSCHICHT, INSBESONDERE EINER PIEZOELEKTRISCHEN SCHICHT
Title (fr)
PROCEDE DE FABRICATION D'UNE COUCHE MONOCRISTALLINE, NOTAMMENT PIEZOELECTRIQUE
Publication
Application
Priority
- FR 1563055 A 20151222
- EP 2016082245 W 20161221
Abstract (en)
[origin: WO2017108994A1] The invention relates to a method for the production of a single-crystal film (10), characterised in that it comprises the following successive steps: the provision of a donor substrate (100) comprising a piezoelectric material of composition ABO3, wherein A consists of at least one element from among Li, Na, K, H, Ca, and B consists of at least one element from among Nb, Ta, Sb, V; the provision of a receiver substrate (110); the transfer of a so-called "seed layer" from the donor substrate (100) to the receiver substrate (110), by means of bonding the donor substrate to the receiver substrate such that the seed layer (102) is located at the bonding interface, and the subsequent thinning of the donor substrate (100) as far as the seed layer (102); the epitaxial growth of a single-crystal film (103) on the piezoelectric material ABO3 of the seed layer (102), said film having composition A'B'O3, wherein: A' consists of at least one element from among Li, Na, K, H; B' consists of at least one element from among Nb, Ta, Sb, V; and A' is different from A or B' is different from B.
IPC 8 full level
C30B 25/18 (2006.01); H10N 30/093 (2023.01); C30B 29/22 (2006.01); H01L 21/762 (2006.01); H10N 30/072 (2023.01); H10N 30/076 (2023.01); H10N 30/079 (2023.01); H10N 30/20 (2023.01); H10N 30/853 (2023.01); H10N 30/87 (2023.01)
CPC (source: EP KR US)
C30B 25/186 (2013.01 - EP KR US); C30B 29/22 (2013.01 - EP KR US); C30B 29/30 (2013.01 - US); H01L 21/02598 (2013.01 - KR); H01L 21/76254 (2013.01 - EP KR US); H03H 9/02031 (2013.01 - US); H03H 9/02574 (2013.01 - US); H03H 9/54 (2013.01 - US); H03H 9/64 (2013.01 - US); H10N 30/072 (2023.02 - EP KR US); H10N 30/076 (2023.02 - KR); H10N 30/079 (2023.02 - EP KR US); H10N 30/093 (2023.02 - US); H10N 30/20 (2023.02 - KR); H10N 30/8542 (2023.02 - EP US); H10N 30/87 (2023.02 - KR); C01G 31/02 (2013.01 - US); C01G 33/00 (2013.01 - US); C01G 35/00 (2013.01 - US); H10N 30/076 (2023.02 - EP US)
Citation (examination)
- JP 2001122699 A 20010508 - MURATA MANUFACTURING CO
- US 2009075066 A1 20090319 - SHIBATA KENJI [JP], et al
- JP 2001285019 A 20011012 - YAMAHA CORP
- LING-YAN ZHANG ET AL: "Performance improvements of KTN ferroelectric thin films for microwave tunable devices", MICROWAVE CONFERENCE (EUMC), 2010 EUROPEAN, IEEE, PISCATAWAY, NJ, USA, 28 September 2010 (2010-09-28), pages 1202 - 1205, XP031785841, ISBN: 978-1-4244-7232-1 & PENG ET AL: "Structural improvement of PLD grown KTa"0"."6"5Nb"0"."3"5O"3 films by the use of KNbO"3 seed layers", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM , NL, vol. 254, no. 4, 23 November 2007 (2007-11-23), pages 1298 - 1302, XP022360094, ISSN: 0169-4332, DOI: 10.1016/J.APSUSC.2007.07.205
- See also references of WO 2017108994A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
FR 3045677 A1 20170623; FR 3045677 B1 20190719; CN 108603305 A 20180928; EP 3394324 A1 20181031; JP 2019508924 A 20190328; JP 6816147 B2 20210120; KR 102681655 B1 20240705; KR 20180098343 A 20180903; SG 11201805382S A 20180730; US 11101428 B2 20210824; US 2018375014 A1 20181227; US 2021367139 A1 20211125; WO 2017108994 A1 20170629
DOCDB simple family (application)
FR 1563055 A 20151222; CN 201680080405 A 20161221; EP 16819558 A 20161221; EP 2016082245 W 20161221; JP 2018532582 A 20161221; KR 20187021267 A 20161221; SG 11201805382S A 20161221; US 201616064416 A 20161221; US 202117396374 A 20210806