Global Patent Index - EP 3411906 A1

EP 3411906 A1 20181212 - MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES

Title (en)

MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES

Title (de)

MIKROSTRUKTURVERBESSERTE LICHTEMPFINDLICHE ADSORPTIONSVORRICHTUNGEN

Title (fr)

DISPOSITIFS PHOTOSENSIBLES À ABSORPTION AMÉLIORÉE PAR MICROSTRUCTURE

Publication

EP 3411906 A1 20181212 (EN)

Application

EP 16880012 A 20161221

Priority

  • US 201562270577 P 20151221
  • US 201662290391 P 20160202
  • US 201662304907 P 20160307
  • US 201662334934 P 20160511
  • US 201662338263 P 20160518
  • US 201662346850 P 20160607
  • US 201662359349 P 20160707
  • US 201662366188 P 20160725
  • US 201662368109 P 20160728
  • US 201662374828 P 20160813
  • US 201662376869 P 20160818
  • US 201662380364 P 20160827
  • US 201662383391 P 20160903
  • US 201662383479 P 20160904
  • US 201662394222 P 20160914
  • US 201662398607 P 20160923
  • US 201662401126 P 20160928
  • US 201662406999 P 20161012
  • US 201662414671 P 20161029
  • US 201662415339 P 20161031
  • US 2016067977 W 20161221

Abstract (en)

[origin: CN109155340A] Techniques for enhancing the quantum efficiency (QE) in photodiodes and avalanche photodiodes with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. QE can be enhanced using heterojunction PIN structures which can result in less light absorbed in the P and/or N regions and more light absorbed in the I region. Various alloys of GeSi can be used for I and/or P regions. The microstructured holes can be funnel shaped, aperiodic, non-circular, textured and/or slanted which can further increase QE.

IPC 8 full level

H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 31/0745 (2012.01); H01L 31/101 (2006.01); H01L 31/105 (2006.01); H01L 31/12 (2006.01)

CPC (source: EP)

H01L 31/022416 (2013.01); H01L 31/02327 (2013.01); H01L 31/035281 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

CN 109155340 A 20190104; EP 3411906 A1 20181212; EP 3411906 A4 20191009

DOCDB simple family (application)

CN 201680082229 A 20161221; EP 16880012 A 20161221