Global Patent Index - EP 3425659 A1

EP 3425659 A1 20190109 - MULTISTAGE FABRICATION METHOD FOR A THIN-FILM PHOTOVOLTAIC DEVICE

Title (en)

MULTISTAGE FABRICATION METHOD FOR A THIN-FILM PHOTOVOLTAIC DEVICE

Title (de)

MEHRSTUFIGES VERFAHREN ZUR HERSTELLUNG EINER DÜNNSCHICHT-PHOTOVOLTAIKVORRICHTUNG

Title (fr)

PROCEDE MULTI-STAGE DE FABRICATION D'UN DISPOSITIF PHOTOVOLTAIQUE EN COUCHES MINCES

Publication

EP 3425659 A1 20190109 (EN)

Application

EP 18184319 A 20120417

Priority

  • EP 13178439 A 20120417
  • EP 12726182 A 20120417
  • IB 2011000857 W 20110419
  • IB 2012051926 W 20120417

Abstract (en)

A method of forming an absorber layer (130) of a thin-film photovoltaic device (100) comprising: a) depositing a first region of an absorber layer over a back contact layer (120) that is disposed on a substrate (110), wherein the first region comprises one or more first elements that are selected from a group consisting of In, Ga, and Al; b) depositing a second region of the absorber layer over the first region, wherein depositing the second region comprises: depositing the one or more first elements at a first deposition rate; depositing one or more second elements at a second deposition rate, wherein the one or more second elements are Cu or Ag; and maintaining a first deposition rate ratio while depositing the second region, wherein the first deposition rate ratio is a ratio of the second deposition rate to the first deposition rate; c) depositing a third region of the absorber layer over the second region, wherein the third region of the absorber layer comprises one or more first elements and one of the one or more second elements, and depositing the third region comprises: depositing the one or more first elements at a third deposition rate; depositing the one of the one or more second elements at a fourth deposition rate; and maintaining a second deposition rate ratio while depositing the third region, wherein the second deposition rate ratio is a ratio of the fourth deposition rate to the third deposition rate, and the second deposition rate ratio is less than 0.83 times the first deposition rate ratio; and d) depositing a fourth region of the absorber layer over the third region, wherein the fourth region of the absorber layer comprises one or more first elements and one of the one or more second elements, and depositing the fourth region comprises: depositing the one or more first elements at a fifth deposition rate; depositing the one or more second elements at a sixth deposition rate; and maintaining a third deposition rate ratio while depositing the fourth region, wherein the third deposition rate ratio is a ratio of the sixth deposition rate to the fifth deposition rate, and the third deposition rate ratio is greater than 1.2 times second ratio.

IPC 8 full level

H01L 21/36 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01)

CPC (source: CN EP KR US)

H01L 21/02422 (2013.01 - CN EP US); H01L 21/02485 (2013.01 - CN EP US); H01L 21/02491 (2013.01 - CN EP US); H01L 21/02505 (2013.01 - CN EP US); H01L 21/0251 (2013.01 - CN EP US); H01L 21/02568 (2013.01 - CN EP US); H01L 21/34 (2013.01 - KR); H01L 31/0322 (2013.01 - CN EP US); H01L 31/03928 (2013.01 - CN EP US); H01L 31/042 (2013.01 - KR); H01L 31/18 (2013.01 - CN EP US); Y02E 10/541 (2013.01 - EP US)

Citation (applicant)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2012143858 A2 20121026; WO 2012143858 A3 20121227; BR 112013026806 A2 20170110; BR 112013026806 B1 20210928; CN 103430279 A 20131204; CN 103430279 B 20160914; CN 106252202 A 20161221; CN 106252202 B 20200110; EP 2647033 A2 20131009; EP 2647033 B1 20160608; EP 2660857 A1 20131106; EP 2660857 B1 20210922; EP 3425659 A1 20190109; EP 3454362 A1 20190313; EP 3454362 B1 20220601; ES 2590464 T3 20161122; HU E030723 T2 20170529; HU E057448 T2 20220528; HU E059253 T2 20221128; JP 2014518592 A 20140731; JP 5904563 B2 20160413; KR 101985944 B1 20190930; KR 20140056169 A 20140509; MY 167014 A 20180731; PL 2647033 T3 20170131; PT 2647033 T 20160912; SI 2647033 T1 20161028; TW 201251062 A 20121216; TW I538235 B 20160611; US 2014026956 A1 20140130; US 9786807 B2 20171010

DOCDB simple family (application)

IB 2012051926 W 20120417; BR 112013026806 A 20120417; CN 201280012915 A 20120417; CN 201610654658 A 20120417; EP 12726182 A 20120417; EP 13178439 A 20120417; EP 18184319 A 20120417; EP 18193986 A 20120417; ES 12726182 T 20120417; HU E12726182 A 20120417; HU E13178439 A 20120417; HU E18193986 A 20120417; JP 2014505765 A 20120417; KR 20137030495 A 20120417; MY PI2013002916 A 20120417; PL 12726182 T 20120417; PT 12726182 T 20120417; SI 201230700 A 20120417; TW 101108131 A 20120309; US 201214009558 A 20120417