Title (en)

VERTICAL SIC MOSFET

Title (de)

VERTIKALER SIC-MOSFET

Title (fr)

MOSFET SIC VERTICAL

Publication

EP 3437138 A1 20190206 (DE)

Application

EP 17703935 A 20170130

Priority

• DE 102016205331 A 20160331
• EP 2017051895 W 20170130

Abstract (en)

[origin: WO2017167469A1] The invention relates to a vertical SiC MOSFET (20) comprising a source connection (2), a drain connection (4) and a gate region (36) as well as an epitaxial layer (22) arranged between the source connection (2) and the drain connection (4) and comprising a first-type doping, where a horizontally extending intermediate layer (24) comprising regions (40) having a second-type doping different from the first-type doping is embedded in the epitaxial layer (22). The vertical SiC MOSFET (20) is characterised in that at least the regions with a second type of doping (40) are electroconductively connected to the source connection (2). The gate region (36) can be arranged in a gate trench (39).

IPC 8 full level

H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/772 (2006.01); H01L 29/808 (2006.01)

CPC (source: EP US)

H01L 27/0617 (2013.01 - US); H01L 29/0623 (2013.01 - EP); H01L 29/0634 (2013.01 - US); H01L 29/0688 (2013.01 - EP); H01L 29/1066 (2013.01 - EP); H01L 29/1608 (2013.01 - US); H01L 29/36 (2013.01 - EP); H01L 29/7722 (2013.01 - EP); H01L 29/7802 (2013.01 - US); H01L 29/7803 (2013.01 - EP); H01L 29/7813 (2013.01 - EP); H01L 29/7827 (2013.01 - US); H01L 29/8083 (2013.01 - EP); H01L 29/1608 (2013.01 - EP); H01L 29/7805 (2013.01 - EP)

Citation (search report)

See references of WO 2017167469A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2017167469 A1 20171005; CN 108886056 A 20181123; CN 108886056 B 20220517; DE 102016205331 A1 20171005; EP 3437138 A1 20190206; JP 2019514206 A 20190530; JP 6807948 B2 20210106; TW 201803125 A 20180116; TW I714749 B 20210101; US 11164971 B2 20211102; US 2020295186 A1 20200917

DOCDB simple family (application)

EP 2017051895 W 20170130; CN 201780021075 A 20170130; DE 102016205331 A 20160331; EP 17703935 A 20170130; JP 2018551347 A 20170130; TW 106110836 A 20170330; US 201716086212 A 20170130