EP 3440704 A4 20200325 - SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATION OF III-N TRANSISTORS
Title (en)
SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATION OF III-N TRANSISTORS
Title (de)
HALBLEITERSTRUKTUR UND ÄTZTECHNIK ZUR MONOLITHISCHEN INTEGRATION VON III-N-TRANSISTOREN
Title (fr)
STRUCTURE SEMI-CONDUCTRICE ET TECHNIQUE DE GRAVURE POUR L'INTÉGRATION MONOLITHIQUE DE TRANSISTORS AU N-III
Publication
Application
Priority
- US 201615094985 A 20160408
- US 2017025685 W 20170403
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/15 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01)
CPC (source: EP US)
H01L 21/8252 (2013.01 - EP); H01L 27/0605 (2013.01 - EP); H01L 27/0883 (2013.01 - EP); H01L 29/155 (2013.01 - EP); H01L 29/4236 (2013.01 - EP); H01L 29/432 (2013.01 - EP); H01L 29/66462 (2013.01 - EP); H01L 29/66621 (2013.01 - US); H01L 29/66704 (2013.01 - US); H01L 29/66734 (2013.01 - US); H01L 29/7787 (2013.01 - EP); H01L 29/2003 (2013.01 - EP); H01L 29/41766 (2013.01 - EP)
Citation (search report)
- [I] WO 2014078699 A1 20140522 - MASSACHUSETTS INST TECHNOLOGY [US]
- [A] KONG YUECHAN ET AL: "Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 35, no. 3, March 2014 (2014-03-01), pages 336 - 338, XP011540617, ISSN: 0741-3106, [retrieved on 20140220], DOI: 10.1109/LED.2013.2297433
- See references of WO 2017176612A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DOCDB simple family (application)
EP 17779582 A 20170403