Global Patent Index - EP 3440704 A4

EP 3440704 A4 20200325 - SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATION OF III-N TRANSISTORS

Title (en)

SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATION OF III-N TRANSISTORS

Title (de)

HALBLEITERSTRUKTUR UND ÄTZTECHNIK ZUR MONOLITHISCHEN INTEGRATION VON III-N-TRANSISTOREN

Title (fr)

STRUCTURE SEMI-CONDUCTRICE ET TECHNIQUE DE GRAVURE POUR L'INTÉGRATION MONOLITHIQUE DE TRANSISTORS AU N-III

Publication

EP 3440704 A4 20200325 (EN)

Application

EP 17779582 A 20170403

Priority

  • US 201615094985 A 20160408
  • US 2017025685 W 20170403

IPC 8 full level

H01L 21/336 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/15 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01)

CPC (source: EP US)

H01L 21/8252 (2013.01 - EP); H01L 27/0605 (2013.01 - EP); H01L 27/0883 (2013.01 - EP); H01L 29/155 (2013.01 - EP); H01L 29/4236 (2013.01 - EP); H01L 29/432 (2013.01 - EP); H01L 29/66462 (2013.01 - EP); H01L 29/66621 (2013.01 - US); H01L 29/66704 (2013.01 - US); H01L 29/66734 (2013.01 - US); H01L 29/7787 (2013.01 - EP); H01L 29/2003 (2013.01 - EP); H01L 29/41766 (2013.01 - EP)

Citation (search report)

  • [I] WO 2014078699 A1 20140522 - MASSACHUSETTS INST TECHNOLOGY [US]
  • [A] KONG YUECHAN ET AL: "Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 35, no. 3, March 2014 (2014-03-01), pages 336 - 338, XP011540617, ISSN: 0741-3106, [retrieved on 20140220], DOI: 10.1109/LED.2013.2297433
  • See references of WO 2017176612A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 3440704 A1 20190213; EP 3440704 A4 20200325

DOCDB simple family (application)

EP 17779582 A 20170403