EP 3445890 B1 20200729 - TICN HAVING REDUCED GROWTH DEFECTS BY MEANS OF HIPIMS
Title (en)
TICN HAVING REDUCED GROWTH DEFECTS BY MEANS OF HIPIMS
Title (de)
TICN MIT REDUZIERTEN WACHSTUMSDEFEKTEN MITTELS HIPIMS
Title (fr)
TICN À DÉFAUTS DE CROISSANCE RÉDUITS OBTENU PAR HIPIMS
Publication
Application
Priority
- US 201662326098 P 20160422
- EP 2017000500 W 20170421
Abstract (en)
[origin: WO2017182124A1] The invention relates to a method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of HIPIMS, wherein, in order to deposit the at least one TiCN layer, at least one Ti target is used as a Ti source for the production of the TiCN layer, which Ti target is sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one noble gas, preferably argon, and at least one nitrogen gas as a reactive gas, wherein, in order to reduce growth defects during the deposition of the at least one TiCN layer, the reactive atmosphere additionally comprises a carbon-containing gas, preferably CH4, as a second reactive gas, which carbon-containing gas is used as a carbon source for the production of the TiCN layer, wherein a bipolar bias voltage is applied to the substrate to be coated during the deposition of the TiCN layer, or at least one graphite target is used as a carbon source for the production of the TiCN layer, which graphite target is sputtered by means of a HIPIMS process in the coating chamber with the reactive atmosphere having only nitrogen gas as a reactive gas, wherein the Ti targets are operated with pulsed power preferably by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.
IPC 8 full level
C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01)
CPC (source: EP IL KR RU US)
C23C 14/0057 (2013.01 - EP IL KR US); C23C 14/02 (2013.01 - IL RU); C23C 14/024 (2013.01 - EP IL US); C23C 14/06 (2013.01 - IL RU); C23C 14/0664 (2013.01 - EP IL KR US); C23C 14/34 (2013.01 - IL RU); C23C 14/345 (2013.01 - EP IL KR US); C23C 14/3485 (2013.01 - EP IL KR US); C23C 14/352 (2013.01 - EP IL KR US); H01J 37/34 (2013.01 - IL RU); H01J 37/3426 (2013.01 - EP IL US); H01J 37/3467 (2013.01 - EP IL KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017182124 A1 20171026; CA 3021704 A1 20171026; CA 3021704 C 20231114; CN 109154061 A 20190104; CN 109154061 B 20210713; EP 3445890 A1 20190227; EP 3445890 B1 20200729; ES 2828090 T3 20210525; IL 262524 A 20181231; IL 262524 B 20211201; JP 2019513903 A 20190530; JP 7179291 B2 20221129; KR 102335906 B1 20211209; KR 20190002538 A 20190108; MY 189225 A 20220131; RU 2018140962 A 20200522; RU 2018140962 A3 20200612; RU 2742325 C2 20210204; US 11542587 B2 20230103; US 2019136363 A1 20190509; US 2023135238 A1 20230504
DOCDB simple family (application)
EP 2017000500 W 20170421; CA 3021704 A 20170421; CN 201780029615 A 20170421; EP 17721957 A 20170421; ES 17721957 T 20170421; IL 26252418 A 20181022; JP 2018555190 A 20170421; KR 20187033472 A 20170421; MY PI2018001785 A 20170421; RU 2018140962 A 20170421; US 201716095369 A 20170421; US 202218148197 A 20221229