EP 3449044 A1 20190306 - CRYSTALLISATION OF AMORPHOUS SILICON FROM A SILICON-RICH ALUMINIUM SUBSTRATE
Title (en)
CRYSTALLISATION OF AMORPHOUS SILICON FROM A SILICON-RICH ALUMINIUM SUBSTRATE
Title (de)
KRISTALLISATION VON AMORPHEM SILICIUM AUS EINEM SILICIUMREICHEN ALUMINIUMSUBSTRAT
Title (fr)
CRISTALLISATION DE SILICIUM AMORPHE À PARTIR D'UN SUBSTRAT D'ALUMINIUM RICHE EN SILICIUM
Publication
Application
Priority
- FR 1653838 A 20160428
- FR 2017050951 W 20170421
Abstract (en)
[origin: WO2017187061A1] The invention relates to a method for manufacturing a semiconductor component including a thin layer of crystalline silicon on a substrate, which includes the following steps: providing a silicon-rich aluminium substrate (S0); depositing a thin layer of amorphous silicon on said substrate (S1); and applying thermal annealing (S2) to said thin layer of amorphous silicon in order to obtain a thin layer of crystalline silicon on said substrate.
IPC 8 full level
C30B 1/02 (2006.01); C30B 29/06 (2006.01); H01L 21/02 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
C23C 16/24 (2013.01 - US); C23C 16/56 (2013.01 - US); C30B 1/023 (2013.01 - EP US); C30B 29/06 (2013.01 - EP US); H01L 21/02425 (2013.01 - EP US); H01L 21/0245 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/02667 (2013.01 - EP US); H01L 31/02327 (2013.01 - US); H01L 31/028 (2013.01 - EP US); H01L 31/0288 (2013.01 - US); H01L 31/03682 (2013.01 - EP US); H01L 31/03921 (2013.01 - EP US); H01L 31/0747 (2013.01 - US); H01L 31/1804 (2013.01 - EP US); H01L 31/182 (2013.01 - US); H01L 31/1872 (2013.01 - EP US); C23C 16/50 (2013.01 - US); H01L 21/02672 (2013.01 - EP US); H01L 31/022425 (2013.01 - US); Y02E 10/546 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2017187061A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2017187061 A1 20171102; EP 3449044 A1 20190306; FR 3050741 A1 20171103; FR 3050741 B1 20180525; US 11282978 B2 20220322; US 2019131485 A1 20190502
DOCDB simple family (application)
FR 2017050951 W 20170421; EP 17723452 A 20170421; FR 1653838 A 20160428; US 201716096992 A 20170421