EP 3453058 A1 20190313 - METHOD FOR THE PRODUCTION OF LAYERS OF RERAM MEMORIES, AND USE OF AN IMPLANTATION DEVICE
Title (en)
METHOD FOR THE PRODUCTION OF LAYERS OF RERAM MEMORIES, AND USE OF AN IMPLANTATION DEVICE
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SCHICHTEN VON ReRAM-SPEICHERN UND VERWENDUNG EINES IMPLANTERS
Title (fr)
PROCÉDÉ DE PRODUCTION DE COUCHES DE MÉMOIRES RERAM ET UTILISATION D'UN IMPLANTEUR IONIQUE
Publication
Application
Priority
- DE 102016005537 A 20160504
- DE 2017000080 W 20170331
Abstract (en)
[origin: WO2017190719A1] The invention relates to a method for producing layers of ReRAM memories and the use of an implantation device. According to the invention, in order to produce ReRAM memories, TMO layers are applied to an electrode in a desired sequence, a process during which at least one TMO layer is bombarded with ions, e.g. oxygen ions, by means of an ion implantation device such that ions are imported into said TMO layer.
IPC 8 full level
H01J 37/317 (2006.01); H01L 45/00 (2006.01)
CPC (source: EP US)
H10N 70/043 (2023.02 - EP US); H10N 70/20 (2023.02 - EP US); H10N 70/24 (2023.02 - US); H10N 70/826 (2023.02 - EP US); H10N 70/883 (2023.02 - EP US); H10N 70/8833 (2023.02 - EP US); H10N 70/8836 (2023.02 - EP US)
Citation (search report)
See references of WO 2017190719A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102016005537 A1 20171109; CN 109155363 A 20190104; EP 3453058 A1 20190313; JP 2019517131 A 20190620; US 2019115533 A1 20190418; WO 2017190719 A1 20171109
DOCDB simple family (application)
DE 102016005537 A 20160504; CN 201780020418 A 20170331; DE 2017000080 W 20170331; EP 17721514 A 20170331; JP 2018551925 A 20170331; US 201716090594 A 20170331