EP 3457916 A1 20190327 - MICROELECTRONIC SENSOR FOR BIOMETRIC AUTHENTICATION
Title (en)
MICROELECTRONIC SENSOR FOR BIOMETRIC AUTHENTICATION
Title (de)
MIKROELEKTRONISCHER SENSOR ZUR BIOMETRISCHEN AUTHENTIFIZIERUNG
Title (fr)
CAPTEUR MICROÉLECTRIQUE POUR AUTHENTIFICATION BIOMÉTRIQUE
Publication
Application
Priority
- US 201615157285 A 20160517
- US 201662362165 P 20160714
- IB 2017051884 W 20170403
Abstract (en)
[origin: WO2017199110A1] In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two- dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non- ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.
IPC 8 full level
A61B 5/00 (2006.01); G01N 27/414 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01)
CPC (source: EP)
G01N 27/414 (2013.01); H01L 29/0657 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/7786 (2013.01)
Citation (search report)
See references of WO 2017199110A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2017199110 A1 20171123; CN 109475297 A 20190315; CN 109475297 B 20220311; EP 3457916 A1 20190327
DOCDB simple family (application)
IB 2017051884 W 20170403; CN 201780041773 A 20170403; EP 17732999 A 20170403