EP 3464688 B1 20200617 - METHOD FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND DEVICE FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
Title (en)
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND DEVICE FOR PRODUCING A SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERSCHEIBE AUS EINKRISTALLINEM SILIZIUM UND VORRICHTUNG ZUR HERSTELLUNG EINER HALBLEITERSCHEIBE AUS EINKRISTALLINEM SILIZIUM
Title (fr)
PROCÉDÉ DE PRODUCTION D'UNE PLAQUETTE DE SEMI-CONDUCTEUR EN SILICIUM MONOCRISTALLIN ET DISPOSITIF DE PRODUCTION D'UNE PLAQUETTE DE SEMI-CONDUCTEUR EN SILICIUM MONOCRISTALLIN
Publication
Application
Priority
- DE 102016209008 A 20160524
- EP 2017061784 W 20170517
Abstract (en)
[origin: WO2017202656A1] The invention relates to a method for producing a semiconductor wafer of monocrystalline silicon, to a device for carrying out the method and to a semiconductor wafer of monocrystalline silicon that contains oxygen and at least one n-type dopant. The method comprises providing a melt of silicon that contains n-type dopant in a quartz crucible, wherein the melt has an initial height hM; heating the melt from the side by selectively applying heat to an upper volume of the melt that has an initial height hm, wherein the height hm is less than the height hM; pulling a single crystal of silicon by the CZ method from the melt at a pulling rate V; heating the melt from above in the region of a phase boundary between the growing single crystal and the melt; heating the melt from above in the region of a surface of the melt; applying a magnetic field to the melt; counterdoping the melt with p-type dopant; and separating the semiconductor wafer of monocrystalline silicon from the single crystal.
IPC 8 full level
C30B 15/04 (2006.01); C30B 15/14 (2006.01); C30B 15/20 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP KR US)
C30B 15/04 (2013.01 - EP KR US); C30B 15/14 (2013.01 - EP KR US); C30B 15/203 (2013.01 - EP KR US); C30B 15/305 (2013.01 - EP KR US); C30B 29/06 (2013.01 - EP KR US); C30B 30/04 (2013.01 - US); H01L 21/02002 (2013.01 - KR); H01L 21/02598 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2017202656 A1 20171130; CN 109154101 A 20190104; CN 109154101 B 20210115; DE 102016209008 A1 20171130; DE 102016209008 B4 20191002; EP 3464688 A1 20190410; EP 3464688 B1 20200617; JP 2019514836 A 20190606; JP 6672481 B2 20200325; KR 102124720 B1 20200619; KR 20180135048 A 20181219; SG 11201810410S A 20181228; TW 201741507 A 20171201; TW I654344 B 20190321; US 10844513 B2 20201124; US 2019136404 A1 20190509
DOCDB simple family (application)
EP 2017061784 W 20170517; CN 201780031978 A 20170517; DE 102016209008 A 20160524; EP 17724025 A 20170517; JP 2018559312 A 20170517; KR 20187033783 A 20170517; SG 11201810410S A 20170517; TW 106115949 A 20170515; US 201716095320 A 20170517