Global Patent Index - EP 3469625 A4

EP 3469625 A4 20200304 - THERMOCOMPRESSION BONDING WITH RAISED FEATURE

Title (en)

THERMOCOMPRESSION BONDING WITH RAISED FEATURE

Title (de)

THERMOKOMPRESSIONSSCHWEISSEN MIT ERHÖHTEM MERKMAL

Title (fr)

LIAISON PAR THERMOCOMPRESSION AVEC CARACTÉRISTIQUES SUR ÉLEVÉES

Publication

EP 3469625 A4 20200304 (EN)

Application

EP 16904801 A 20160609

Priority

US 2016036593 W 20160609

Abstract (en)

[origin: WO2017213652A1] A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

IPC 8 full level

B81C 1/00 (2006.01); H01L 21/50 (2006.01); H01L 23/10 (2006.01)

CPC (source: EP)

B81C 1/00269 (2013.01); H01L 21/50 (2013.01); H01L 23/10 (2013.01); B81C 2203/019 (2013.01); B81C 2203/037 (2013.01)

Citation (search report)

  • [YA] US 2007048898 A1 20070301 - CARLSON GREGORY A [US], et al
  • [YA] JP 2000263533 A 20000926 - SUMITOMO METAL ELECTRONICS DEV
  • [Y] TABE M ET AL: "Electron Field Emission from Silicon Nanoprotrusions", 2001 6TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, OCTOBER 22-25, 2001, SHANGHAI, CHINA, PROCEEDINGS, IEEE, PISCATAWAY, NJ, USA, vol. 2, 22 October 2001 (2001-10-22), pages 1378 - 1382, XP010576232, ISBN: 978-0-7803-6520-9
  • [Y] -: "LOCOS", WIKIPEDIA, THE FREE ENCYCLOPEDIA, 28 April 2016 (2016-04-28), XP055660339, Retrieved from the Internet <URL:https://en.wikipedia.org/w/index.php?title=LOCOS&oldid=717637282> [retrieved on 20200121]
  • [A] TOFTEBERG H R ET AL: "Wafer-level Au-Au bonding in the 350-450 °C temperature range", JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 24, no. 8, 084002, 22 July 2014 (2014-07-22), XP020268126, ISSN: 0960-1317, [retrieved on 20140722], DOI: 10.1088/0960-1317/24/8/084002
  • [A] MALIK N ET AL: "Al-Al thermocompression bonding for wafer-level MEMS packaging", 2013 TRANSDUCERS & EUROSENSORS XXVII: THE 17TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS, JUNE 16-20, 2013, BARCELONA, SPAIN, IEEE, PISCATAWAY, NJ, USA, 16 June 2013 (2013-06-16), pages 1067 - 1070, XP032499599, DOI: 10.1109/TRANSDUCERS.2013.6626955
  • [A] FAN J ET AL: "Low Temperature Cu-to-Cu Bonding for Wafer-Level Hermetic Encapsulation of 3D Microsystems", ELECTROCHEMICAL AND SOLID-STATE LETTERS, THE ELECTROCHEMICAL SOCIETY, vol. 14, no. 11, 23 September 2011 (2011-09-23), US, pages H470 - H474, XP055659240, ISSN: 1099-0062, DOI: 10.1149/2.025111esl
  • [A] KIM J ET AL: "A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 26, no. 4, 12 August 2008 (2008-08-12), pages 1363 - 1367, XP012114295, ISSN: 1071-1023, DOI: 10.1116/1.2952461
  • [A] ANTELIUS M ET AL: "Small footprint wafer-level vacuum packaging using compressible gold sealing rings", JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 21, no. 8, 085011, 30 June 2011 (2011-06-30), XP020208862, ISSN: 0960-1317, DOI: 10.1088/0960-1317/21/8/085011
  • [A] LAPISA M ET AL: "Wafer-level capping and sealing of heat sensitive substances and liquids with gold gaskets", SENSORS AND ACTUATORS A: PHYSICAL, vol. 201, 22 July 2013 (2013-07-22), NL, pages 154 - 163, XP055659234, ISSN: 0924-4247, DOI: 10.1016/j.sna.2013.07.007
  • See references of WO 2017213652A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2017213652 A1 20171214; EP 3469625 A1 20190417; EP 3469625 A4 20200304; JP 2019523983 A 20190829; JP 6755558 B2 20200916

DOCDB simple family (application)

US 2016036593 W 20160609; EP 16904801 A 20160609; JP 2018560114 A 20160609