EP 3485505 A1 20190522 - METHOD OF A DONOR SUBSTRATE UNDERGOING RECLAMATION
Title (en)
METHOD OF A DONOR SUBSTRATE UNDERGOING RECLAMATION
Title (de)
VERFAHREN ZUR RÜCKGEWINNUNG EINES DONORSUBSTRATS
Title (fr)
PROCÉDÉ D'UN SUBSTRAT DONNEUR SOUMIS À UNE RÉCUPÉRATION
Publication
Application
Priority
- US 201662361468 P 20160712
- US 201662367911 P 20160728
- US 201715643370 A 20170706
- US 201715643384 A 20170706
- IB 2017054209 W 20170712
Abstract (en)
[origin: CN109478493A] A donor substrate (502; 602; 702) in a layer transfer process, is stabilized by attaching a backing substrate (504; 604; 703). The backing substrate (504; 604; 703) allows thermal and mechanical stabilization during high-power implant processes. Upon cleaving the donor substrate (502; 602; 702) to release a thin layer of material to a target substrate (510), the backing substrate (504; 604; 703) prevents uncontrolled release of internal stress leading to buckling/fracture of the donor substrate (502; 602; 702). The internal stress may accumulate in the donor substrate (502; 602; 702) due to processes such as cleave region (506; 704) formation, bonding to the target substrate (510), and/or the cleaving process itself, with uncontrolled bow and warp potentially precluding reclamation/reuse of the donor substrate (502; 602; 702) in subsequent layer transfer processes. In certain embodiments the backing substrate (504; 604; 703) may exhibit a Coefficient of Thermal Expansion (CTE) substantially matching, or complementary to, that of the donor substrate (502; 602; 702). In some embodiments the backing substrate (504; 604; 703) may include a feature such as a lip (606).
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 33/00 (2010.01)
CPC (source: EP KR)
H01L 21/02032 (2013.01 - EP KR); H01L 21/76254 (2013.01 - EP KR); H01L 33/005 (2013.01 - EP); H01L 33/0093 (2020.05 - KR); H01L 21/0254 (2013.01 - EP); H01L 21/02546 (2013.01 - EP); H01L 33/0062 (2013.01 - EP); H01L 33/0093 (2020.05 - EP)
Citation (search report)
See references of WO 2018011731A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
CN 109478493 A 20190315; EP 3485505 A1 20190522; JP 2019527477 A 20190926; KR 20190027821 A 20190315
DOCDB simple family (application)
CN 201780042232 A 20170712; EP 17755560 A 20170712; JP 2019501489 A 20170712; KR 20197001310 A 20170712