EP 3490000 B1 20230104 - NEAR-INFRARED PHOTODETECTOR SEMICONDUCTOR DEVICE
Title (en)
NEAR-INFRARED PHOTODETECTOR SEMICONDUCTOR DEVICE
Title (de)
HALBLEITERBAUELEMENT EINES NAHINFRAROTPHOTODETEKTORS
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR DE PHOTODÉTECTEUR INFRAROUGE PROCHE
Publication
Application
Priority
EP 17203572 A 20171124
Abstract (en)
[origin: EP3490000A1] The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.
IPC 8 full level
H01L 27/146 (2006.01); H01L 31/028 (2006.01)
CPC (source: EP US)
H01L 27/14629 (2013.01 - EP); H01L 27/14649 (2013.01 - EP US); H01L 31/028 (2013.01 - EP US); H01L 31/035281 (2013.01 - US); H01L 31/105 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3490000 A1 20190529; EP 3490000 B1 20230104; CN 111684597 A 20200918; CN 111684597 B 20230912; US 11335824 B2 20220517; US 2020350447 A1 20201105; WO 2019101577 A1 20190531
DOCDB simple family (application)
EP 17203572 A 20171124; CN 201880072965 A 20181113; EP 2018081086 W 20181113; US 201816763894 A 20181113