EP 3494247 A1 20190612 - CRUCIBLE FOR CRYSTALLIZATION OF MOLTEN SILICON, PROCESS FOR ITS MANUFACTURE AND USE THEREOF
Title (en)
CRUCIBLE FOR CRYSTALLIZATION OF MOLTEN SILICON, PROCESS FOR ITS MANUFACTURE AND USE THEREOF
Title (de)
TIEGEL ZUR KRISTALLISIERUNG VON GESCHMOLZENEM SILICIUM, VERFAHREN ZU DESSEN HERSTELLUNG UND VERWENDUNG DAVON
Title (fr)
CREUSET POUR LA CRISTALLISATION DE SILICIUM FONDU, PROCÉDÉ DE FABRICATION ET SON UTILISATION
Publication
Application
Priority
- EP 16182660 A 20160803
- EP 2017069661 W 20170803
Abstract (en)
[origin: WO2018024830A1] Crucible for the crystallization of molten silicon coated with silicon nitride where embedded SiO2 particles having a particle size up to 500 µm and a surface density ≥ 100 cm-2, emerge in the inner volume of the crucible enabling the production of silicon ingot with improved electrical properties.
IPC 8 full level
C30B 11/00 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01)
CPC (source: EP)
C30B 11/002 (2013.01); C30B 29/06 (2013.01); C30B 35/002 (2013.01)
Citation (search report)
See references of WO 2018024830A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2018024830 A1 20180208; EP 3494247 A1 20190612; SG 11201900650W A 20190227; TW 201816200 A 20180501
DOCDB simple family (application)
EP 2017069661 W 20170803; EP 17746135 A 20170803; SG 11201900650W A 20170803; TW 106126008 A 20170802