EP 3503387 B1 20211201 - RF POWER TRANSISTORS WITH IMPEDANCE MATCHING CIRCUITS, AND METHODS OF MANUFACTURE THEREOF
Title (en)
RF POWER TRANSISTORS WITH IMPEDANCE MATCHING CIRCUITS, AND METHODS OF MANUFACTURE THEREOF
Title (de)
HF-LEISTUNGSTRANSISTOREN MIT IMPEDANZANPASSUNGSSCHALTUNGEN UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
TRANSISTORS DE PUISSANCE RF AVEC DES CIRCUITS D'ADAPTATION D'IMPÉDANCE ET LEURS PROCÉDÉS DE FABRICATION
Publication
Application
Priority
EP 17306857 A 20171220
Abstract (en)
[origin: EP3503387A1] Embodiments of an RF amplifier include a transistor (120, 220) with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit is an output pre-match impedance conditioning shunt circuit, which includes a first shunt inductance (134, 234, 434), a second shunt inductance (135, 135', 235 435, 935, 935'), and a shunt capacitor (142, 142', 342, 442) coupled in series. The first shunt inductance (134, 234, 434) comprises a plurality of bondwires coupled between the first current carrying terminal and the second shunt inductance (135, 135', 235 435, 935, 935'), and the second shunt inductance (135, 135', 235 435, 935, 935') comprises an integrated inductor coupled between the first shunt inductance (134, 234, 434) and a first terminal of the shunt capacitor (142, 142', 342, 442). The shunt capacitor (142, 142', 342, 442) is configured to provide capacitive harmonic control of an output of the transistor (120, 220).
IPC 8 full level
H03F 1/56 (2006.01); H03F 3/195 (2006.01)
CPC (source: EP US)
H01L 23/66 (2013.01 - US); H01L 24/48 (2013.01 - US); H01L 24/49 (2013.01 - US); H03F 1/565 (2013.01 - EP US); H03F 3/193 (2013.01 - US); H03F 3/195 (2013.01 - EP US); H01L 2223/6655 (2013.01 - US); H01L 2224/48091 (2013.01 - US); H01L 2224/49175 (2013.01 - US); H01L 2924/1205 (2013.01 - US); H01L 2924/1206 (2013.01 - US); H01L 2924/1304 (2013.01 - US); H01L 2924/13091 (2013.01 - EP US); H01L 2924/1421 (2013.01 - US); H03F 2200/108 (2013.01 - EP); H03F 2200/181 (2013.01 - EP); H03F 2200/216 (2013.01 - EP US); H03F 2200/222 (2013.01 - EP US); H03F 2200/225 (2013.01 - EP US); H03F 2200/297 (2013.01 - EP US); H03F 2200/301 (2013.01 - EP US); H03F 2200/309 (2013.01 - EP US); H03F 2200/387 (2013.01 - EP US); H03F 2200/391 (2013.01 - EP US); H03F 2200/451 (2013.01 - EP US)
C-Set (source: EP US)
Citation (examination)
WO 2019104325 A1 20190531 - CREE INC [US]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3503387 A1 20190626; EP 3503387 B1 20211201; CN 109861654 A 20190607; CN 109861654 B 20230721; US 10951180 B2 20210316; US 2019190464 A1 20190620
DOCDB simple family (application)
EP 17306857 A 20171220; CN 201811562921 A 20181220; US 201816211485 A 20181206