EP 3506359 A1 20190703 - MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTIONS AND METHOD FOR MANUFACTURING THEREOF
Title (en)
MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTIONS AND METHOD FOR MANUFACTURING THEREOF
Title (de)
SPEICHERVORRICHTUNG MIT MAGNETTUNNELÜBERGÄNGEN UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIF DE MÉMOIRE AVEC JONCTIONS DE TUNNEL MAGNÉTIQUE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
EP 17211020 A 20171229
Abstract (en)
The disclosed memory device (10) comprises memory elements (11, 12), formed of a stack comprising at least a second magnetic layer (120) over a first magnetic layer (110) arranged on a substrate (100), and selector devices (141, 142) in contact with respective memory elements and arranged in or above the second layer, wherein the memory elements are interconnected via the first layer and separated from each other by a trench (150) formed in the second layer. Preferably, the memory elements are MTJ elements and the selector devices are transistors.
IPC 8 full level
H01L 27/22 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC (source: EP US)
H10B 61/22 (2023.02 - EP US); H10N 50/01 (2023.02 - EP US); H10N 50/80 (2023.02 - US)
Citation (search report)
- [X] US 2014070342 A1 20140313 - SANDHU GURTEJ S [US], et al
- [XI] JP 2012244079 A 20121210 - HITACHI LTD, et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3506359 A1 20190703; US 11004898 B2 20210511; US 2019221608 A1 20190718
DOCDB simple family (application)
EP 17211020 A 20171229; US 201816236051 A 20181228