EP 3509087 B1 20220216 - METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING INFRARED DETECTION DEVICE
Title (en)
METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING INFRARED DETECTION DEVICE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERKRISTALLSUBSTRATS UND VERFAHREN ZUR HERSTELLUNG EINES INFRAROTDETEKTORS
Title (fr)
PROCÉDÉ DE PRODUCTION DE SUBSTRAT DE CRISTAL SEMI-CONDUCTEUR, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF DE DÉTECTION INFRAROUGE
Publication
Application
Priority
JP 2016075431 W 20160831
Abstract (en)
[origin: EP3509087A1] [Object] To provide a semiconductor crystal substrate including a GaSb layer with high surface flatness.[Means of Achieving the Object] In order to achieve the above object, there is provided a semiconductor crystal substrate that includes a crystal substrate that is formed of a material including GaSb or InAs; a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity; and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.
IPC 8 full level
H01L 21/20 (2006.01); G01J 1/02 (2006.01); H01L 21/203 (2006.01); H01L 21/336 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 29/205 (2006.01); H01L 29/78 (2006.01); H01L 31/10 (2006.01); H01L 33/00 (2010.01); H01L 35/26 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP US)
G01J 1/02 (2013.01 - US); G01J 1/0407 (2013.01 - US); G01J 1/44 (2013.01 - US); G01J 5/0853 (2013.01 - EP); G01J 5/20 (2013.01 - EP); H01L 21/02395 (2013.01 - EP US); H01L 21/02398 (2013.01 - EP US); H01L 21/0243 (2013.01 - EP US); H01L 21/02466 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP US); H01L 21/02513 (2013.01 - EP US); H01L 21/02546 (2013.01 - US); H01L 21/02549 (2013.01 - EP US); H01L 21/02576 (2013.01 - EP US); H01L 21/02579 (2013.01 - EP US); H01L 21/02631 (2013.01 - EP US); H01L 21/20 (2013.01 - US); H01L 21/28264 (2013.01 - US); H01L 27/144 (2013.01 - US); H01L 27/1446 (2013.01 - EP); H01L 27/146 (2013.01 - US); H01L 27/1467 (2013.01 - US); H01L 27/14694 (2013.01 - US); H01L 29/157 (2013.01 - US); H01L 29/205 (2013.01 - EP US); H01L 29/66462 (2013.01 - US); H01L 29/7785 (2013.01 - US); H01L 29/78 (2013.01 - EP US); H01L 31/0304 (2013.01 - US); H01L 31/035236 (2013.01 - EP US); H01L 31/0392 (2013.01 - US); H01L 31/10 (2013.01 - US); H01L 31/105 (2013.01 - EP); H01L 31/184 (2013.01 - EP US); H01L 33/00 (2013.01 - US); H01L 33/0062 (2013.01 - US); H01L 33/06 (2013.01 - US); H01L 33/12 (2013.01 - EP US); H01L 33/30 (2013.01 - EP US); H01S 5/22 (2013.01 - US); H01S 5/343 (2013.01 - US); H01S 5/34306 (2013.01 - EP); H01S 5/34346 (2013.01 - EP); H10N 10/01 (2023.02 - EP US); H10N 10/17 (2023.02 - EP US); H10N 10/853 (2023.02 - EP US); H10N 10/857 (2023.02 - EP US); H01L 33/06 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3509087 A1 20190710; EP 3509087 A4 20190904; EP 3509087 B1 20220216; JP 6769486 B2 20201014; JP WO2018042534 A1 20190627; US 10937647 B2 20210302; US 11152210 B2 20211019; US 2019214252 A1 20190711; US 2021143009 A1 20210513; WO 2018042534 A1 20180308
DOCDB simple family (application)
EP 16915095 A 20160831; JP 2016075431 W 20160831; JP 2018536573 A 20160831; US 201916272027 A 20190211; US 202017121846 A 20201215