EP 3509089 A4 20200506 - METHOD FOR CLEANING SEMICONDUCTOR PRODUCTION CHAMBER
Title (en)
METHOD FOR CLEANING SEMICONDUCTOR PRODUCTION CHAMBER
Title (de)
VERFAHREN ZUR REINIGUNG EINER HALBLEITERHERSTELLUNGSKAMMER
Title (fr)
PROCÉDÉ DE NETTOYAGE DE CHAMBRE DE PRODUCTION DE SEMI-CONDUCTEUR
Publication
Application
Priority
- JP 2016169562 A 20160831
- JP 2017030835 W 20170829
Abstract (en)
[origin: EP3509089A1] A method for effectively removing fluorine atoms remaining in a semiconductor fabrication chamber after cleaning the chamber with chlorine trifluoride is provided. The method includes exposing the inside of the chamber after semiconductor fabrication to chlorine trifluoride to remove an object to be removed remaining in the chamber and then thermally treating the inside of the chamber with at least one gas selected from the group consisting of nitrogen, argon, helium, and hydrogen. It is preferred that the exposure to chlorine trifluoride is carried out while monitoring the chamber inside temperature and that the chlorine trifluoride feed is ceased when the inside temperature decreases to a predetermined temperature.
IPC 8 full level
C23C 16/32 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/31 (2006.01); H01L 21/67 (2006.01)
CPC (source: EP KR US)
B08B 5/00 (2013.01 - US); B08B 9/032 (2013.01 - US); B08B 9/08 (2013.01 - US); B08B 13/00 (2013.01 - US); C23C 16/325 (2013.01 - EP US); C23C 16/4405 (2013.01 - EP US); C23C 16/4412 (2013.01 - EP US); C23C 16/46 (2013.01 - US); H01L 21/02041 (2013.01 - KR); H01L 21/67028 (2013.01 - KR); H01L 21/67098 (2013.01 - KR); H01L 21/67248 (2013.01 - KR); B08B 2209/032 (2013.01 - US); B08B 2209/08 (2013.01 - US); H01L 29/1608 (2013.01 - US)
Citation (search report)
- [XY] US 2004002220 A1 20040101 - MIZUSHIMA ICHIRO [JP]
- [IY] JP 2001284264 A 20011012 - SHINETSU HANDOTAI KK
- [Y] US 2015000695 A1 20150101 - NODA TAKAAKI [JP], et al
- [X] US 6042654 A 20000328 - COMITA PAUL B [US], et al
- [XP] US 2017200602 A1 20170713 - KIKUCHI AKIOU [JP], et al & JP 2003149058 A 20030521 - TOSHIBA CORP
- [X] JP H05243163 A 19930921 - KYOCERA CORP
- [X] JP H0663097 B2 19940817
- [A] US 2013164943 A1 20130627 - KOSHI YASUNOBU [JP], et al
- See references of WO 2018043446A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3509089 A1 20190710; EP 3509089 A4 20200506; CN 109478510 A 20190315; JP WO2018043446 A1 20190725; KR 20190042553 A 20190424; TW 201812091 A 20180401; US 2021285100 A1 20210916; WO 2018043446 A1 20180308
DOCDB simple family (application)
EP 17846451 A 20170829; CN 201780043539 A 20170829; JP 2017030835 W 20170829; JP 2018537281 A 20170829; KR 20197002778 A 20170829; TW 106129473 A 20170830; US 201716323383 A 20170829