EP 3510623 A4 20200819 - APPARATUS AND METHOD FOR CORRECTING ARRAYED ASTIGMATISM IN A MULTI-COLUMN SCANNING ELECTRON MICROSCOPY SYSTEM
Title (en)
APPARATUS AND METHOD FOR CORRECTING ARRAYED ASTIGMATISM IN A MULTI-COLUMN SCANNING ELECTRON MICROSCOPY SYSTEM
Title (de)
VORRICHTUNG UND VERFAHREN ZUR KORREKTUR VON ARRAY-ASTIGMATISMUS IN EINEM MEHRSPALTIGEN RASTERELEKTRONENMIKROSKOPIESYSTEM
Title (fr)
APPAREIL ET PROCÉDÉ DE CORRECTION DE L'ASTIGMATISME EN RÉSEAU DANS UN SYSTÈME DE MICROSCOPIE ÉLECTRONIQUE À BALAYAGE À COLONNES MULTIPLES
Publication
Application
Priority
- US 201662385084 P 20160908
- US 201715645863 A 20170710
- US 2017050342 W 20170906
Abstract (en)
[origin: US2018068825A1] A multi-beam scanning electron microscopy (SEM) system is disclosed. The system includes an electron beam source configured to generate a source electron beam. The system includes a set of electron-optical elements configured to generate a flood electron beam from the source electron beam. The system includes a multi-beam lens array with a plurality of electron-optical pathways configured to split the flood electron beam into a plurality of primary electron beams, and a plurality of electrically-charged array layers configured to adjust at least some of the plurality of primary electron beams. The system includes a set of electron-optical elements configured to direct at least some of the plurality of primary electron beams onto a surface of a sample secured by a stage. The system includes a detector array configured to detect a plurality of electrons emanated from the surface of the sample in response to the plurality of primary electron beams.
IPC 8 full level
H01J 37/153 (2006.01); H01J 37/28 (2006.01); G01N 23/2251 (2018.01)
CPC (source: EP KR US)
G01N 23/2251 (2013.01 - EP US); H01J 37/153 (2013.01 - EP US); H01J 37/226 (2013.01 - KR); H01J 37/28 (2013.01 - EP KR US); H01J 2237/1532 (2013.01 - EP); H01J 2237/2813 (2013.01 - US)
Citation (search report)
- [XY] US 2013248731 A1 20130926 - TANIMOTO SAYAKA [JP], et al
- [YA] US 2015155134 A1 20150604 - FROSIEN JÜRGEN [DE], et al
- [I] US 2012305798 A1 20121206 - ZONNEVYLLE AERNOUT CHRISTIAAN [NL], et al
- [Y] US 2011079731 A1 20110407 - KIM HO SEOB [KR]
- [A] EP 2405458 A1 20120111 - MAPPER LITHOGRAPHY IP BV [NL]
- [I] ZONNEVYLLE A C ET AL: "Multi-electron-beam deflector array", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 123, 30 June 2014 (2014-06-30), pages 140 - 148, XP029075405, ISSN: 0167-9317, DOI: 10.1016/J.MEE.2014.06.014
- See also references of WO 2018048949A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 10497536 B2 20191203; US 2018068825 A1 20180308; CN 109690726 A 20190426; CN 109690726 B 20210507; EP 3510623 A1 20190717; EP 3510623 A4 20200819; JP 2019526912 A 20190919; JP 6986555 B2 20211222; KR 102515235 B1 20230328; KR 20190041016 A 20190419; TW 201820375 A 20180601; TW I751193 B 20220101; WO 2018048949 A1 20180315
DOCDB simple family (application)
US 201715645863 A 20170710; CN 201780054685 A 20170906; EP 17849483 A 20170906; JP 2019512998 A 20170906; KR 20197009582 A 20170906; TW 106130765 A 20170908; US 2017050342 W 20170906