EP 3520127 A1 20190807 - VERY HIGH CAPACITANCE FILM CAPACITOR AND METHOD FOR THE PRODUCTION OF SAME
Title (en)
VERY HIGH CAPACITANCE FILM CAPACITOR AND METHOD FOR THE PRODUCTION OF SAME
Title (de)
SCHICHTKONDENSATOR MIT SEHR HOHER KAPAZITÄT UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
CONDENSATEUR FILM A TRÈS HAUTE CAPACITÉ ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- FR 1659489 A 20161003
- EP 2017074619 W 20170928
Abstract (en)
[origin: CA3036330A1] The present invention relates in particular to a very high capacitance film capacitor (1) that comprises a dielectric layer (100) consisting of at least one dielectric film (100a,..., 100i), each dielectric film (100a,..., 100i) of this dielectric layer (100) having the following parameters: - a relative dielectric permittivity [ef i] such that ef i = 10, - a thickness [ef i] such that 0.05 µm = ef i = 50 µm, - a dielectric strength [Ef i] such that Ef i = 50 V/µm, parameters in which "f" signifies "film" and i = 1, "i" designating the "ith" dielectric film (100i) of said dielectric layer (100), this dielectric layer (100) separating a first electronic charge carrier structure (200) from a second electronic charge carrier structure (300), these two structures having an opposite surface (S) separated by the dielectric layer(100).
IPC 8 full level
H01G 4/015 (2006.01); H01G 4/06 (2006.01); H01G 4/14 (2006.01); H01G 4/30 (2006.01); H01G 4/32 (2006.01)
CPC (source: EP KR US)
H01G 4/015 (2013.01 - EP KR US); H01G 4/06 (2013.01 - EP KR US); H01G 4/14 (2013.01 - EP KR US); H01G 4/18 (2013.01 - US); H01G 4/308 (2013.01 - EP KR US); H01G 4/32 (2013.01 - EP KR US); H01G 4/33 (2013.01 - US)
Citation (search report)
See references of WO 2018065289A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
FR 3057100 A1 20180406; BR 112019006024 A2 20190618; CA 3036330 A1 20180412; CN 109844881 A 20190604; EP 3520127 A1 20190807; IL 265704 A 20190530; JP 2019534580 A 20191128; KR 20190057382 A 20190528; RU 2019112654 A 20201106; US 2019287721 A1 20190919; WO 2018065289 A1 20180412
DOCDB simple family (application)
FR 1659489 A 20161003; BR 112019006024 A 20170928; CA 3036330 A 20170928; CN 201780061154 A 20170928; EP 17771785 A 20170928; EP 2017074619 W 20170928; IL 26570419 A 20190328; JP 2019538715 A 20170928; KR 20197012955 A 20170928; RU 2019112654 A 20170928; US 201716338978 A 20170928