Global Patent Index - EP 3535435 A1

EP 3535435 A1 20190911 - METHOD FOR DEPOSITING CHALCOGENIDE THIN FILMS

Title (en)

METHOD FOR DEPOSITING CHALCOGENIDE THIN FILMS

Title (de)

VERFAHREN ZUR ABSCHEIDUNG VON CHALKOGENID-DÜNNSCHICHTEN

Title (fr)

PROCEDE DE DÉPÔT DE FILMS MINCES DE CHALCOGENURE

Publication

EP 3535435 A1 20190911 (FR)

Application

EP 17804615 A 20171031

Priority

  • FR 1660583 A 20161102
  • FR 2017052998 W 20171031

Abstract (en)

[origin: WO2018083415A1] The invention relates to a device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area (4) and a diffusion area (6) receiving the element (P) to be treated, the intake area (4) and the diffusion area (6) extending along a longitudinal axis (Z), a radical hydrogen source (8) connected to the intake area (4), pumping means (19), means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area (4) in the longitudinal direction within the radical hydrogen flow. The pumping means (19) are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated (P) in order to activate said element so as to absorb the precursor.

IPC 8 full level

C23C 16/30 (2006.01); C23C 16/448 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01)

CPC (source: EP US)

C23C 16/305 (2013.01 - EP US); C23C 16/4488 (2013.01 - EP US); C23C 16/452 (2013.01 - EP US); C23C 16/45544 (2013.01 - US); C23C 16/45553 (2013.01 - EP US); C23C 16/45559 (2013.01 - US); C23C 16/45582 (2013.01 - EP US)

Citation (search report)

See references of WO 2018083415A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

FR 3058162 A1 20180504; FR 3058162 B1 20210101; EP 3535435 A1 20190911; US 11377735 B2 20220705; US 2019256975 A1 20190822; WO 2018083415 A1 20180511

DOCDB simple family (application)

FR 1660583 A 20161102; EP 17804615 A 20171031; FR 2017052998 W 20171031; US 201716345848 A 20171031